Inventor · disambiguated record
Oana Julia Spulber
Also filed as: Spulber Oana Julia
7 granted patents·8 citations·filing 2017–2022
73Inventor score
Files withINFINEON TECHNOLOGIES AG7
Top patents by PatentIndex Score
7 records- 0192US10332973B2N-channel bipolar power semiconductor device with p-layer in the drift volumeINFINEON TECHNOLOGIES AG·Filed 2018·Granted Jun 25, 2019·8 cites·20 claims
- 0266US12438002B2Semiconductor device including a field stop regionINFINEON TECHNOLOGIES AG·Filed 2022·Granted Oct 7, 2025·0 cites·24 claims
- 0360US10546939B2N-channel bipolar power semiconductor device with P-layer in the drift volumeINFINEON TECHNOLOGIES AG·Filed 2019·Granted Jan 28, 2020·0 cites·20 claims
- 0455US9978851B2n-channel bipolar power semiconductor device with p-layer in the drift volumeINFINEON TECHNOLOGIES AG·Filed 2017·Granted May 22, 2018·0 cites·20 claims
- 0549US10734484B2Silicon carbide semiconductor device with trench gate structure and horizontally arranged channel and current spread regionsINFINEON TECHNOLOGIES AG·Filed 2019·Granted Aug 4, 2020·0 cites·24 claims
- 0648US11004963B2Insulated gate bipolar transistor having first and second field stop zone portions and manufacturing methodINFINEON TECHNOLOGIES AG·Filed 2018·Granted May 11, 2021·0 cites·25 claims
- 0745US11081544B2Method of manufacturing a semiconductor device comprising first and second field stop zone portionsINFINEON TECHNOLOGIES AG·Filed 2018·Granted Aug 3, 2021·0 cites·24 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →