Inventor · disambiguated record
Oiging C. Ouyang
Also filed as: OUYANG OIGING C
2 granted patents·39 citations·filing 2005–2005
63Inventor score
Files withIBM2
Top patents by PatentIndex Score
2 records- 0191US7388278B2High performance field effect transistors on SOI substrate with stress-inducing material as buried insulator and methodsIBM·Filed 2005·Granted Jun 17, 2008·33 cites·22 claims
- 0276US7405436B2Stressed field effect transistors on hybrid orientation substrateIBM·Filed 2005·Granted Jul 29, 2008·6 cites·9 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →