Inventor · disambiguated record
Oleg Kovalenkov
Also filed as: KOVALENKOV OLEG · KOVALENKOV OLEG V
8 granted patents·3 pending applications·115 citations·filing 2003–2013
87Inventor score
Files withDMITRIEV VLADIMIR A4OSTENDO TECHNOLOGIES INC3FREIBERGER COMPOUND MAT GMBH1TECHNOLOGIES AND DEVICES INC1TECHNOLOGIES AND DEVICES INTER1
Top patents by PatentIndex Score
11 records- 0194US7727333B1HVPE apparatus and methods for growth of indium containing materials and materials and structures grown therebyTECHNOLOGIES AND DEVICES INTER·Filed 2007·Granted Jun 1, 2010·21 cites·22 claims
- 0292US9577143B1Backflow reactor liner for protection of growth surfaces and for balancing flow in the growth linerOSTENDO TECHNOLOGIES INC·Filed 2013·Granted Feb 21, 2017·8 cites·22 claims
- 0392US8992684B1Epitaxy reactor internal component geometries for the growth of superior quality group III-nitride materialsOSTENDO TECHNOLOGIES INC·Filed 2013·Granted Mar 31, 2015·7 cites·10 claims
- 0488US6955719B2Manufacturing methods for semiconductor devices with multiple III-V material layersTECHNOLOGIES AND DEVICES INC·Filed 2003·Granted Oct 18, 2005·52 cites·34 claims
- 0586US9023673B1Free HCL used during pretreatment and AlGaN growth to control growth layer orientation and inclusionsOSTENDO TECHNOLOGIES INC·Filed 2013·Granted May 5, 2015·8 cites·13 claims
- 0685US8647435B1HVPE apparatus and methods for growth of p-type single crystal group III nitride materialsDMITRIEV VLADIMIR A·Filed 2007·Granted Feb 11, 2014·11 cites·12 claims
- 0773US9416464B1Apparatus and methods for controlling gas flows in a HVPE reactorDMITRIEV VLADIMIR A·Filed 2007·Granted Aug 16, 2016·4 cites·15 claims
- 0866US8673074B2Growth of planar non-polar {1 -1 0 0} M-plane and semi-polar {1 1 -2 2} gallium nitride with hydride vapor phase epitaxy (HVPE)USIKOV ALEXANDER·Filed 2009·Granted Mar 18, 2014·4 cites·1 claims
- 0953US2009286331A2Method for simulatenously producing multiple wafers during a single epitaxial growth run and semiconductor structure grown therebyFREIBERGER COMPOUND MAT GMBH·Filed 2008·Application pending·0 cites
- 1046US2007032046A1Method for simultaneously producing multiple wafers during a single epitaxial growth run and semiconductor structure grown therebyDMITRIEV VLADIMIR A·Filed 2005·Application pending·0 cites
- 1142US2006011135A1HVPE apparatus for simultaneously producing multiple wafers during a single epitaxial growth runDMITRIEV VLADIMIR A·Filed 2005·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →