Inventor · disambiguated record
Olivier Laparra
Also filed as: LAPARRA OLIVIER · LAPARRA OLIVIER F
6 granted patents·4 pending applications·153 citations·filing 1996–2013
84Inventor score
Files withVLSI TECHNOLOGY INC5AVIZA TECH INC2KAES MARTIN1KONINKL PHILIPS ELECTRONICS NV1LAPARRA OLIVIER1
Top patents by PatentIndex Score
10 records- 0187US6326283B1Trench-diffusion corner rounding in a shallow-trench (STI) processVLSI TECHNOLOGY INC·Filed 2000·Granted Dec 4, 2001·56 cites·6 claims
- 0271US6319796B1Manufacture of an integrated circuit isolation structureVLSI TECHNOLOGY INC·Filed 1999·Granted Nov 20, 2001·44 cites·27 claims
- 0356US5920787ASoft edge induced local oxidation of siliconVLSI TECHNOLOGY INC·Filed 1997·Granted Jul 6, 1999·27 cites·13 claims
- 0454US5811346ASilicon corner rounding in shallow trench isolation processVLSI TECHNOLOGY INC·Filed 1997·Granted Sep 22, 1998·20 cites·18 claims
- 0554US2013291939A1Emitter for silicon solar cells and methodKAES MARTIN·Filed 2013·Application pending·0 cites
- 0650US2012160296A1Textured photovoltaic cells and methodsLAPARRA OLIVIER·Filed 2011·Application pending·0 cites
- 0742US2010117203A1Oxide-containing film formed from siliconAVIZA TECH INC·Filed 2007·Application pending·0 cites
- 0840US2007010072A1Uniform batch film deposition process and films so producedAVIZA TECH INC·Filed 2006·Application pending·0 cites
- 0934US5702978ASloped silicon nitride etch for smoother field oxide edgeVLSI TECHNOLOGY INC·Filed 1996·Granted Dec 30, 1997·5 cites·8 claims
- 1028US6727166B1Removal of silicon oxynitride material using a wet chemical process after gate etch processingKONINKL PHILIPS ELECTRONICS NV·Filed 1999·Granted Apr 27, 2004·1 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →