Inventor · disambiguated record
Orb Acton
Also filed as: ACTON ORB
6 granted patents·6 pending applications·4 citations·filing 2018–2024
69Inventor score
Top patents by PatentIndex Score
12 records- 0182US11348916B2Leave-behind protective layer having secondary purposeINTEL CORP·Filed 2018·Granted May 31, 2022·3 cites·13 claims
- 0276US12471354B2Dipole threshold voltage tuning for high voltage transistor stacksINTEL CORP·Filed 2020·Granted Nov 11, 2025·1 cites·20 claims
- 0366US11996408B2Leave-behind protective layer having secondary purposeINTEL CORP·Filed 2022·Granted May 28, 2024·0 cites·18 claims
- 0458US2025391774A1Contact over active gate structures with gate recess for gate insulating cap layers for advanced integrated circuit structure fabricationINTEL CORP·Filed 2024·Application pending·0 cites
- 0552US12051698B2Fabrication of gate-all-around integrated circuit structures having molybdenum nitride metal gates and gate dielectrics with a dipole layerINTEL CORP·Filed 2020·Granted Jul 30, 2024·0 cites·23 claims
- 0651US2024290788A1Metal gate fabrication for nanoribbon-based transistorsINTEL CORP·Filed 2023·Application pending·0 cites
- 0750US2025113598A1Multi-threshold scheme using dual dipole patterning in complementary transistor dielectricsINTEL CORP·Filed 2023·Application pending·0 cites
- 0849US2025210356A1Gate terminal methods and structuresJAGOO ZAFRULLAH·Filed 2023·Application pending·0 cites
- 0949US2024332394A1Fabrication of gate-all-around integrated circuit structures having multi-layer molybdenum metal gate stackINTEL CORP·Filed 2023·Application pending·0 cites
- 1046US12310060B2Gate-all-around integrated circuit structures having uniform threshold voltages and tight gate endcap tolerancesINTEL CORP·Filed 2021·Granted May 20, 2025·0 cites·20 claims
- 1145US2023420531A1Fabrication of gate-all-around integrated circuit structures having common metal gates and having gate dielectrics with an opposite polarity dipole layerINTEL CORP·Filed 2022·Application pending·0 cites
- 1239US11476334B2Silicide structure of an integrated transistor device and method of providing sameINTEL CORP·Filed 2018·Granted Oct 18, 2022·0 cites·13 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →