Inventor · disambiguated record
Orin W. Holland
Also filed as: HOLLAND ORIN W · HOLLAND ORIN WAYNE
13 granted patents·3 pending applications·550 citations·filing 1986–2011
94Inventor score
Top patents by PatentIndex Score
16 records- 0189US4728619AField implant process for CMOS using germaniumMOTOROLA INC·Filed 1987·Granted Mar 1, 1988·88 cites·22 claims
- 0285US6222253B1Buried oxide layer in siliconIBM·Filed 2000·Granted Apr 24, 2001·34 cites·10 claims
- 0382US5661044AProcessing method for forming dislocation-free SOI and other materials for semiconductor useLOCKHEED MARTIN ENERGY SYS INC·Filed 1995·Granted Aug 26, 1997·77 cites·15 claims
- 0481US4743563AProcess of controlling surface dopingMOTOROLA INC·Filed 1987·Granted May 10, 1988·45 cites·10 claims
- 0580US4928156AN-channel MOS transistors having source/drain regions with germaniumMOTOROLA INC·Filed 1989·Granted May 22, 1990·54 cites·5 claims
- 0675US4748134AIsolation process for semiconductor devicesMOTOROLA INC·Filed 1987·Granted May 31, 1988·44 cites·13 claims
- 0774US6090689AMethod of forming buried oxide layers in siliconIBM·Filed 1998·Granted Jul 18, 2000·41 cites·15 claims
- 0874US4920076AMethod for enhancing growth of SiO2 in Si by the implantation of germaniumUS ENERGY·Filed 1988·Granted Apr 24, 1990·53 cites·11 claims
- 0973US6355541B1Method for transfer of thin-film of silicon carbide via implantation and wafer bondingLOCKHEED MARTIN ENERGY RES COR·Filed 1999·Granted Mar 12, 2002·46 cites·20 claims
- 1069US4837173AN-channel MOS transistors having source/drain regions with germaniumMOTOROLA INC·Filed 1987·Granted Jun 6, 1989·34 cites·9 claims
- 1155US4704367ASuppression of hillock growth through multiple thermal cycles by argon implantationALVIS JOHN R·Filed 1986·Granted Nov 3, 1987·24 cites·10 claims
- 1251US9196497B2Photolytic processing of materials with hydrogenHOLLAND ORIN W·Filed 2011·Granted Nov 24, 2015·1 cites·30 claims
- 1341US4908334AMethod for forming metallic silicide films on silicon substrates by ion beam depositionUS ENERGY·Filed 1989·Granted Mar 13, 1990·9 cites·6 claims
- 1436US2009309623A1Method for Assessment of Material DefectsAMETHYST RES INC·Filed 2008·Application pending·0 cites
- 1530US2012009769A1Annealing Of Amorphous Layers In Si Formed By Ion-Implantation; A Method To Eliminate Residual DefectsHOLLAND ORIN W·Filed 2011·Application pending·0 cites
- 1626US2010327276A1Method and system for passivation of defects in mercury cadmium telluride based optoelectric devicesAMETHYST RES INC·Filed 2010·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →