Inventor · disambiguated record
Osamu Nakatsuka
Also filed as: NAKATSUKA OSAMU
1 granted patent·5 pending applications·4 citations·filing 2002–2015
25Inventor score
Files withUNIV NAGOYA2UNIV NAGOYA NAT UNIV CORP2NAGOYA UNIVERSITY NAT UNIVERSITY CORP1TOYODA GOSEI KK1
Top patents by PatentIndex Score
6 records- 0144US6943376B2Electrode for p-type SiCTOYODA GOSEI KK·Filed 2002·Granted Sep 13, 2005·4 cites·11 claims
- 0235US2006011916A1Substrate for epitaxial growth, process for producing the same, and multi-layered film structureUNIV NAGOYA NAT UNIV CORP·Filed 2005·Application pending·0 cites
- 0333US2004137735A1Method for fabricating a SiGe film, substrate for epitaxial growth and multilayered structureUNIV NAGOYA·Filed 2003·Application pending·0 cites
- 0432US2005189652A1Method for fabricating a silicide film, multilayered intermediate structure and multilayered structureUNIV NAGOYA NAT UNIV CORP·Filed 2004·Application pending·0 cites
- 0531US2004166329A1Method for fabricating a thin line structure, multilayered structure and multilayered intermediate structureUNIV NAGOYA·Filed 2003·Application pending·0 cites
- 0625US2015371850A1Method of forming semiconductor thin filmNAGOYA UNIVERSITY NAT UNIVERSITY CORP·Filed 2015·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →