Inventor · disambiguated record
Paul Bridger
Also filed as: BRIDGER PAUL · BRIDGER PAUL M
32 granted patents·1 pending application·335 citations·filing 1998–2015
97Inventor score
Top patents by PatentIndex Score
33 records- 0196US6583399B1Optical resonator microsphere sensor with altering Q-factorCALIFORNIA INST OF TECHN·Filed 2000·Granted Jun 24, 2003·103 cites·20 claims
- 0294US7417257B2III-nitride device with improved layout geometryINT RECTIFIER CORP·Filed 2006·Granted Aug 26, 2008·28 cites·10 claims
- 0394US6579068B2Method of manufacture of a suspended nitride membrane and a microperistaltic pump using the sameCALIFORNIA INST OF TECHN·Filed 2001·Granted Jun 17, 2003·72 cites·20 claims
- 0492US8338861B2III-nitride semiconductor device with stepped gate trench and process for its manufactureBRIERE MICHAEL A·Filed 2008·Granted Dec 25, 2012·18 cites·16 claims
- 0591US7288803B2III-nitride power semiconductor device with a current sense electrodeINT RECTIFIER CORP·Filed 2005·Granted Oct 30, 2007·19 cites·17 claims
- 0687US7491627B2III-nitride device and method with variable epitaxial growth directionINT RECTIFIER CORP·Filed 2007·Granted Feb 17, 2009·11 cites·12 claims
- 0783US8455920B2III-nitride heterojunction deviceBRIDGER PAUL·Filed 2008·Granted Jun 4, 2013·8 cites·24 claims
- 0883US6870992B2Alignment apparatus and methods for transverse optical couplingXPONENT PHOTONICS INC·Filed 2002·Granted Mar 22, 2005·25 cites·54 claims
- 0977US8916908B2III-nitride heterojunction deviceINT RECTIFIER CORP·Filed 2013·Granted Dec 23, 2014·3 cites·17 claims
- 1077US8865575B2Fabrication of III-nitride semiconductor device and related structuresINT RECTIFIER CORP·Filed 2013·Granted Oct 21, 2014·2 cites·20 claims
- 1172US9117671B2Fabrication of III-nitride semiconductor device and related structuresINT RECTIFIER CORP·Filed 2014·Granted Aug 25, 2015·1 cites·20 claims
- 1270US7892938B2Structure and method for III-nitride monolithic power ICINT RECTIFIER CORP·Filed 2006·Granted Feb 22, 2011·3 cites·20 claims
- 1370US7439555B2III-nitride semiconductor device with trench structureINT RECTIFIER CORP·Filed 2004·Granted Oct 21, 2008·12 cites·20 claims
- 1466US8614129B2Method for fabricating a semiconductor deviceBEACH ROBERT·Filed 2006·Granted Dec 24, 2013·1 cites·22 claims
- 1566US7821034B2Integrated III-nitride devicesINT RECTIFIER CORP·Filed 2007·Granted Oct 26, 2010·3 cites·20 claims
- 1664US8536624B2Active area shaping for III-nitride devicesINT RECTIFIER CORP·Filed 2012·Granted Sep 17, 2013·1 cites·16 claims
- 1762US9157169B2Process for manufacture of super lattice using alternating high and low temperature layers to block parasitic current pathBRIDGER PAUL·Filed 2006·Granted Oct 13, 2015·1 cites·15 claims
- 1862US8193612B2Complimentary nitride transistors vertical and common drainBEACH ROBERT·Filed 2005·Granted Jun 5, 2012·1 cites·20 claims
- 1962US7166867B2III-nitride device with improved layout geometryINT RECTIFIER CORP·Filed 2004·Granted Jan 23, 2007·8 cites·14 claims
- 2059US8697581B2III-nitride semiconductor device with trench structureBEACH ROBERT·Filed 2008·Granted Apr 15, 2014·1 cites·20 claims
- 2155US9000486B2III-nitride heterojunction deviceINT RECTIFIER CORP·Filed 2013·Granted Apr 7, 2015·0 cites·18 claims
- 2255US8803199B2III-nitride semiconductor device with stepped gateINT RECTIFIER CORP·Filed 2013·Granted Aug 12, 2014·0 cites·14 claims
- 2354US2015357182A1Fabrication of III-Nitride Power Semiconductor DeviceINT RECTIFIER CORP·Filed 2015·Application pending·0 cites
- 2452US9911600B2Fabrication of semiconductor device using alternating high and low temperature layersINFINEON TECHNOLOGIES AMERICAS CORP·Filed 2015·Granted Mar 6, 2018·0 cites·11 claims
- 2550US9142637B2III-nitride monolithic ICBEACH ROBERT·Filed 2011·Granted Sep 22, 2015·0 cites·19 claims
- 2649US7510957B2Complimentary lateral III-nitride transistorsINT RECTIFIER CORP·Filed 2006·Granted Mar 31, 2009·0 cites·10 claims
- 2748US8748204B2Structure and method for III-nitride device isolationBRIDGER PAUL·Filed 2006·Granted Jun 10, 2014·0 cites·20 claims
- 2847US7276423B2III-nitride device and method with variable epitaxial growth directionINT RECTIFIER CORP·Filed 2004·Granted Oct 2, 2007·2 cites·15 claims
- 2947US7205657B2Complimentary lateral nitride transistorsINT RECTIFIER CORP·Filed 2005·Granted Apr 17, 2007·0 cites·21 claims
- 3044US7135753B2Structure and method for III-nitride monolithic power ICINT RECTIFIER CORP·Filed 2004·Granted Nov 14, 2006·1 cites·16 claims
- 3143US6078055AProximity lithography deviceCALIFORNIA INST OF TECHN·Filed 1998·Granted Jun 20, 2000·10 cites·10 claims
- 3241US8120139B2Void isolated III-nitride deviceBRIDGER PAUL·Filed 2004·Granted Feb 21, 2012·0 cites·12 claims
- 3335US6288404B1Proximity lithography deviceCALIFORNIA INST OF TECHN·Filed 2000·Granted Sep 11, 2001·1 cites·6 claims
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