Inventor · disambiguated record
Paolo Cappelletti
Also filed as: CAPPELLETTI PAOLO · CAPPELLETTI PAOLO G · CAPPELLETTI PAOLO GIUSEPPE
56 granted patents·2 pending applications·922 citations·filing 1987–2025
99Inventor score
Files withST MICROELECTRONICS SRL34SGS THOMSON MICROELECTRONICS14MICRON TECHNOLOGY INC3GROSSI ALESSANDRO2SGS MICROELETTRONICA SPA2
Top patents by PatentIndex Score
58 records- 0196US7012832B1Magnetic memory cell with plural read transistorsST MICROELECTRONICS SRL·Filed 2003·Granted Mar 14, 2006·160 cites·30 claims
- 0294US5942004ADevice and a method for storing data and corresponding error-correction informationST MICROELECTRONICS SRL·Filed 1995·Granted Aug 24, 1999·125 cites·26 claims
- 0392US11227992B2Memory cellST MICROELECTRONICS SRL·Filed 2020·Granted Jan 18, 2022·3 cites·23 claims
- 0487US6074916AFLASH-EPROM with embedded EEPROMSGS THOMSON MICROELECTRONICS·Filed 1998·Granted Jun 13, 2000·58 cites·23 claims
- 0586US2025344406A1Switching cellST MICROELECTRONICS SRL·Filed 2025·Application pending·0 cites
- 0682US6410387B1Process for integrating in a same chip a non-volatile memory and a high-performance logic circuitryST MICROELECTRONICS SRL·Filed 1999·Granted Jun 25, 2002·38 cites·24 claims
- 0781US11653579B2Phase-change memory cellST MICROELECTRONICS SRL·Filed 2021·Granted May 16, 2023·1 cites·18 claims
- 0880US11355702B2Memory deviceST MICROELECTRONICS SRL·Filed 2019·Granted Jun 7, 2022·2 cites·45 claims
- 0980US7560782B2Transistor structure with high input impedance and high current capabilityPELLIZZER FABIO·Filed 2006·Granted Jul 14, 2009·8 cites·14 claims
- 1080US6713347B2Process for integrating in a same chip a non-volatile memory and a high-performance logic circuitryST MICROELECTRONICS SRL·Filed 2002·Granted Mar 30, 2004·18 cites·16 claims
- 1180US5612913AByte erasable EEPROM fully compatible with a single power supply flash-EPROM processSGS THOMSON MICROELECTRONICS·Filed 1995·Granted Mar 18, 1997·47 cites·27 claims
- 1278US4935790AEEPROM memory cell with a single level of polysilicon programmable and erasable bit by bitSGS MICROELETTRONICA SPA·Filed 1987·Granted Jun 19, 1990·36 cites·5 claims
- 1377US12114580B2Phase-change memory cellST MICROELECTRONICS SRL·Filed 2023·Granted Oct 8, 2024·0 cites·18 claims
- 1477US6172908B1Controlled hot-electron writing method for non-volatile memory cellsST MICROELECTRONICS SRL·Filed 1998·Granted Jan 9, 2001·45 cites·15 claims
- 1576US10910558B2Memory deviceST MICROELECTRONICS SRL·Filed 2019·Granted Feb 2, 2021·3 cites·26 claims
- 1675US6222775B1Flash compatible EEPROMST MICROELECTRONICS SRL·Filed 2000·Granted Apr 24, 2001·24 cites·29 claims
- 1774US12402328B2Switching cell with direct contact to fixed resistor elementST MICROELECTRONICS SRL·Filed 2022·Granted Aug 26, 2025·0 cites·18 claims
- 1873US6876033B2Electrically erasable and programmable non-volatile memory cellST MICROELECTRONICS SRL·Filed 2003·Granted Apr 5, 2005·19 cites·19 claims
- 1971US11641786B2Memory deviceST MICROELECTRONICS SRL·Filed 2022·Granted May 2, 2023·0 cites·14 claims
- 2071US6410389B1Non-volatile memory cell with a single level of polysilicon, in particular of the flash EEPROM type, and method for manufacturing the sameST MICROELECTRONICS SRL·Filed 2000·Granted Jun 25, 2002·17 cites·21 claims
- 2170US8664702B2Shallow trench isolation for a memoryGROSSI ALESSANDRO·Filed 2011·Granted Mar 4, 2014·2 cites·14 claims
- 2268US5793675AMethod of evaluating the gate oxide of non-volatile EPROM, EEPROM and flash-EEPROM memoriesST MICROELECTRONICS SRL·Filed 1997·Granted Aug 11, 1998·24 cites·15 claims
- 2368US5466622AProcess for fabricating integrated devices including nonvolatile memories and transistors with tunnel oxide protectionSGS THOMSON MICROELECTRONICS·Filed 1994·Granted Nov 14, 1995·25 cites·14 claims
- 2466US9577188B2Semiconductor constructions and methods of forming memory cellsMICRON TECHNOLOGY INC·Filed 2015·Granted Feb 21, 2017·1 cites·7 claims
- 2566US6576950B1EEPROM type non-volatile memory cell and corresponding production methodST MICROELECTRONICS SRL·Filed 2000·Granted Jun 10, 2003·13 cites·12 claims
- 2666US4968645AMethod for manufacturing MOS/CMOS monolithic integrated circuits including silicide and polysilicon patterningSGS THOMSON MICROELECTRONICS·Filed 1988·Granted Nov 6, 1990·32 cites·3 claims
- 2764US5712816AMethod for evaluating the dielectric layer of nonvolatile EPROM, EEPROM and flash-EEPROM memoriesST MICROELECTRONICS SRL·Filed 1996·Granted Jan 27, 1998·40 cites·44 claims
- 2862US5913120AProcess for fabricating integrated devices including nonvolatile memories and transistors with tunnel oxide protectionSGS THOMSON MICROELECTRONICS·Filed 1995·Granted Jun 15, 1999·23 cites·9 claims
- 2960US7001800B2Manufacturing method for non-active electrically structures in order to optimize the definition of active electrically structures in an electronic circuit integrated on a semiconductor substrate and corresponding circuitST MICROELECTRONICS SRL·Filed 2004·Granted Feb 21, 2006·8 cites·7 claims
- 3059US12356634B2Phase change memoryST MICROELECTRONICS SRL·Filed 2022·Granted Jul 8, 2025·0 cites·21 claims
- 3159US6275960B1Self-test and correction of loss of charge errors in a flash memory, erasable and programmable by sectors thereofST MICROELECTRONICS SRL·Filed 1998·Granted Aug 14, 2001·19 cites·27 claims
- 3259US5637520AProcess for fabricating integrated devices including flash-EEPROM memories and transistorsST MICROELECTRONICS SRL·Filed 1994·Granted Jun 10, 1997·22 cites·13 claims
- 3355US8963220B2Shallow trench isolation for a memoryMICRON TECHNOLOGY INC·Filed 2013·Granted Feb 24, 2015·0 cites·19 claims
- 3455US5850092AFLASH-EPROM with embedded EEPROMSGS THOMSON MICROELECTRONICS·Filed 1997·Granted Dec 15, 1998·14 cites·8 claims
- 3553US8097506B2Shallow trench isolation for a memoryGROSSI ALESSANDRO·Filed 2008·Granted Jan 17, 2012·0 cites·17 claims
- 3652US7304485B2Analysis of the quality of contacts and vias in multi-metal fabrication processes of semiconductor devices, method and test chip architectureST MICROELECTRONICS SRL·Filed 2004·Granted Dec 4, 2007·3 cites·21 claims
- 3752US6399444B1Method of making floating gate non-volatile memory cell with low erasing voltageSGS THOMSON MICROELECTRONICS·Filed 2000·Granted Jun 4, 2002·3 cites·15 claims
- 3852US6147380AFloating gate non-volatile memory cell with low erasing voltage and having different potential barriersSGS THOMSON MICROELECTRONICS·Filed 2000·Granted Nov 14, 2000·3 cites·35 claims
- 3950US5322803AProcess for the manufacture of a component to limit the programming voltage and to stabilize the voltage incorporated in an electric device with EEPROM memory cellsSGS THOMSON MICROELECTRONICS·Filed 1992·Granted Jun 21, 1994·13 cites·4 claims
- 4049US5497345ANonvolatile EPROM, EEPROM of flash-EEPROM memory with tunnel oxide protectionST MICROELECTRONICS SRL·Filed 1994·Granted Mar 5, 1996·12 cites·12 claims
- 4148US9166159B2Semiconductor constructions and methods of forming memory cellsMICRON TECHNOLOGY INC·Filed 2013·Granted Oct 20, 2015·0 cites·11 claims
- 4247US7320904B2Manufacturing method for non-active electrically structures in order to optimize the definition of active electrically structures in an electronic circuit integrated on a semiconductor substrate and corresponding circuitST MICROELECTRONICS SRL·Filed 2006·Granted Jan 22, 2008·0 cites·14 claims
- 4345US6841445B2Method of making floating gate non-volatile memory cell with low erasing voltage having double layer gate dielectricSGS THOMSON MICROELECTRONICS·Filed 2004·Granted Jan 11, 2005·1 cites·4 claims
- 4445US2009014709A1Process for manufacturing an array of cells including selection bipolar junction transistors with projecting conduction regionsST MICROELECTRONICS SRL·Filed 2008·Application pending·0 cites
- 4544US5604699AMethod of evaluating the dielectric layer of nonvolatile EPROM, EEPROM and flash-EEPROM memoriesST MICROELECTRONICS SRL·Filed 1995·Granted Feb 18, 1997·8 cites·30 claims
- 4642US6284585B1Electronic memory device having bit lines with block selector switchesST MICROELECTRONICS SRL·Filed 1999·Granted Sep 4, 2001·6 cites·6 claims
- 4741US5328863AProcess for manufacturing a ROM cell with low drain capacitanceST MICROELECTRICS SRL·Filed 1991·Granted Jul 12, 1994·9 cites·32 claims
- 4840US6710394B2Method of making floating gate non-volatile memory cell with low erasing voltage having double layer gate dielectricSGS THOMSON MICROELECTRONICS·Filed 2002·Granted Mar 23, 2004·0 cites·8 claims
- 4940US6532171B2Nonvolatile semiconductor memory capable of selectively erasing a plurality of elemental memory unitsST MICROELECTRONICS SRL·Filed 2001·Granted Mar 11, 2003·2 cites·14 claims
- 5040US5969977AElectronic memory device having bit lines with block selector switchesST MICROELECTRONICS SRL·Filed 1997·Granted Oct 19, 1999·5 cites·21 claims
Showing the top 50 of 58 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →