Inventor · disambiguated record
Pane-Chane Chao
Also filed as: CHAO PANE-CHANE
11 granted patents·1 pending application·134 citations·filing 1983–2015
88Inventor score
Files withBAE SYS INF & ELECT SYS INTEG3CORNELL RES FOUNDATION INC3ACTIS ROBERT1BAE SYSTEMS INFORMATION1CHU KANIN1
Top patents by PatentIndex Score
12 records- 0187US4551905AFabrication of metal lines for semiconductor devicesCORNELL RES FOUNDATION INC·Filed 1983·Granted Nov 12, 1985·72 cites·12 claims
- 0278US8003504B2Structure and method for fabrication of field effect transistor gates with or without field platesBAE SYS INF & ELECT SYS INTEG·Filed 2007·Granted Aug 23, 2011·7 cites·13 claims
- 0378US7943286B2Reproducible, high yield method for fabricating ultra-short T-gates on HFETsBAE SYSTEMS INFORMATION·Filed 2008·Granted May 17, 2011·7 cites·4 claims
- 0465US9117838B2Asymmetrically recessed high-power and high-gain ultra-short gate HEMT deviceBAE SYS INF & ELECT SYS INTEG·Filed 2013·Granted Aug 25, 2015·2 cites·7 claims
- 0563US4536942AFabrication of T-shaped metal lines for semiconductor devicesCORNELL RES FOUNDATION INC·Filed 1984·Granted Aug 27, 1985·26 cites·19 claims
- 0661US10529820B2Method for gallium nitride on diamond semiconductor wafer productionBAE SYS INF & ELECT SYS INTEG·Filed 2015·Granted Jan 7, 2020·1 cites·20 claims
- 0754US9024326B2Method and design of an RF thru-via interconnectACTIS ROBERT·Filed 2012·Granted May 5, 2015·1 cites·18 claims
- 0854US8304332B2Structure and method for fabrication of field effect transistor gates with or without field platesIMMORLICA ANTHONY A·Filed 2011·Granted Nov 6, 2012·1 cites·3 claims
- 0948US4673960AFabrication of metal lines for semiconductor devicesCORNELL RES FOUNDATION INC·Filed 1985·Granted Jun 16, 1987·17 cites·6 claims
- 1047US8445941B2Asymmetrically recessed high-power and high-gain ultra-short gate HEMT deviceXU DONG·Filed 2009·Granted May 21, 2013·0 cites·18 claims
- 1138US9136111B1Field effect transistors with gate electrodes having Ni and Ti metal layersCHU KANIN·Filed 2012·Granted Sep 15, 2015·0 cites·16 claims
- 1238US2013295757A1Short gate-length high electron-mobility transistors with asymmetric recess and self-aligned ohmic electrodesSYSTEMS INTEGRATION INC BAE SYSTEMS INFORMATION AND ELECTRONIC·Filed 2013·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →