Inventor · disambiguated record
Pascal Costaganna
Also filed as: COSTAGANNA PASCAL
5 granted patents·67 citations·filing 1999–2019
75Inventor score
Top patents by PatentIndex Score
5 records- 0189US6342452B1Method of fabricating a Si3N4/polycide structure using a dielectric sacrificial layer as a maskIBM·Filed 2000·Granted Jan 29, 2002·54 cites·10 claims
- 0262US10181429B2Method for the formation of transistors PDSO1 and FDSO1 on a same substrateX FAB SEMICONDUCTOR FOUNDRIES·Filed 2017·Granted Jan 15, 2019·1 cites·17 claims
- 0355US11011547B2Method for forming a microelectronic deviceX FAB FRANCE·Filed 2019·Granted May 18, 2021·1 cites·21 claims
- 0440US6207580B1Method of plasma etching the tungsten silicide layer in the gate conductor stack formationIBM·Filed 1999·Granted Mar 27, 2001·11 cites·8 claims
- 0525US11031505B2Transistor and its manufacturing processX FAB FRANCE·Filed 2018·Granted Jun 8, 2021·0 cites·17 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →