Inventor · disambiguated record
Paul S. Fechner
Also filed as: FECHNER PAUL · FECHNER PAUL S
29 granted patents·7 pending applications·559 citations·filing 1994–2015
97Inventor score
Top patents by PatentIndex Score
36 records- 0194US8575560B1Integrated circuit cumulative dose radiation sensorFECHNER PAUL S·Filed 2012·Granted Nov 5, 2013·15 cites·20 claims
- 0293US5753955AMOS device having a gate to body connection with a body injection current limiting feature for use on silicon on insulator substratesHONEYWELL INC·Filed 1996·Granted May 19, 1998·114 cites·9 claims
- 0393US5631863ARandom access memory cell resistant to radiation induced upsetsHONEYWELL INC·Filed 1996·Granted May 20, 1997·145 cites·9 claims
- 0488US7192816B2Self-aligned body tie for a partially depleted SOI device structureHONEYWELL INT INC·Filed 2005·Granted Mar 20, 2007·14 cites·16 claims
- 0586US6058041ASEU hardening circuitHONEYWELL INC·Filed 1998·Granted May 2, 2000·65 cites·22 claims
- 0682US8975952B2CMOS logic circuit using passive internal body tie biasHONEYWELL INT INC·Filed 2012·Granted Mar 10, 2015·6 cites·18 claims
- 0781US9618635B2Integrated radiation sensitive circuitFECHNER PAUL S·Filed 2012·Granted Apr 11, 2017·6 cites·14 claims
- 0880US7679139B2Non-planar silicon-on-insulator device that includes an “area-efficient” body tieHONEYWELL INT INC·Filed 2007·Granted Mar 16, 2010·8 cites·16 claims
- 0978US7732287B2Method of forming a body-tieHONEYWELL INT INC·Filed 2006·Granted Jun 8, 2010·8 cites·14 claims
- 1076US6603166B2Frontside contact on silicon-on-insulator substrateHONEYWELL INT INC·Filed 2001·Granted Aug 5, 2003·20 cites·27 claims
- 1174US6960810B2Self-aligned body tie for a partially depleted SOI device structureHONEYWELL INT INC·Filed 2002·Granted Nov 1, 2005·16 cites·13 claims
- 1272US9671362B2ph sensor with bonding agent disposed in a patternHONEYWELL INT INC·Filed 2013·Granted Jun 6, 2017·4 cites·14 claims
- 1372US6433983B1High performance output buffer with ESD protectionHONEYWELL INC·Filed 1999·Granted Aug 13, 2002·32 cites·23 claims
- 1471US8742831B2Method for digital programmable optimization of mixed-signal circuitsFECHNER PAUL S·Filed 2009·Granted Jun 3, 2014·7 cites·20 claims
- 1571US6180984B1Integrated circuit impedance device and method of manufacture thereforHONEYWELL INC·Filed 1998·Granted Jan 30, 2001·30 cites·25 claims
- 1670US8933412B2Integrated comparative radiation sensitive circuitFECHNER PAUL S·Filed 2012·Granted Jan 13, 2015·3 cites·19 claims
- 1764US5519336AMethod for electrically characterizing the insulator in SOI devicesHONEYWELL INC·Filed 1994·Granted May 21, 1996·36 cites·6 claims
- 1862US8399845B2Neutron detector cell efficiencyFECHNER PAUL S·Filed 2012·Granted Mar 19, 2013·2 cites·19 claims
- 1962US7964897B2Direct contact to area efficient body tie process flowHONEYWELL INT INC·Filed 2008·Granted Jun 21, 2011·2 cites·20 claims
- 2053US8153985B2Neutron detector cell efficiencyRANDAZZO TODD ANDREW·Filed 2009·Granted Apr 10, 2012·2 cites·16 claims
- 2153US6300666B1Method for forming a frontside contact to the silicon substrate of a SOI wafer in the presence of planarized contact dielectricsHONEYWELL INC·Filed 1998·Granted Oct 9, 2001·23 cites·17 claims
- 2249US9817254B2Stabilization gas environments in a proton-exchanged lithium niobate optical chipHONEYWELL INT INC·Filed 2015·Granted Nov 14, 2017·0 cites·20 claims
- 2345US8901702B1Programmable electrical fuse with temperature gradient between anode and cathodeHONEYWELL INT INC·Filed 2013·Granted Dec 2, 2014·0 cites·16 claims
- 2445US7939865B2Metal semiconductor field effect transistor (MESFET) silicon-on-insulator structure having partial trench spacersHONEYWELL INT INC·Filed 2009·Granted May 10, 2011·0 cites·6 claims
- 2545US6576508B2Formation of a frontside contact on silicon-on-insulator substrateHONEYWELL INT INC·Filed 2002·Granted Jun 10, 2003·1 cites·13 claims
- 2644US9773808B2Compact self-aligned implantation transistor edge resistor for SRAM SEU mitigationHONEYWELL INT INC·Filed 2015·Granted Sep 26, 2017·0 cites·20 claims
- 2744US9664641B2pH sensor with substrate or bonding layer configured to maintain piezoresistance of the ISFET dieHONEYWELL INT INC·Filed 2013·Granted May 30, 2017·0 cites·16 claims
- 2843US2008254590A1Fabrication process for silicon-on-insulator field effect transistors using high temperature nitrogen annealingVOGT ERIC E·Filed 2007·Application pending·0 cites
- 2943US2008233704A1Integrated Resistor Capacitor StructureHONEYWELL INT INC·Filed 2007·Application pending·0 cites
- 3042US9246501B2Converter for analog inputsHONEYWELL INT INC·Filed 2014·Granted Jan 26, 2016·0 cites·20 claims
- 3142US2007224838A1Method of straining a silicon island for mobility improvementHONEYWELL INT INC·Filed 2006·Application pending·0 cites
- 3242US2010117153A1High voltage soi cmos device and method of manufactureHONEYWELL INT INC·Filed 2008·Application pending·0 cites
- 3337US2011186940A1Neutron sensor with thin interconnect stackHONEYWELL INT INC·Filed 2010·Application pending·0 cites
- 3434US2003103301A1On chip smart capacitorsFiled 2001·Application pending·0 cites
- 3530US7183042B2Bit end design for pseudo spin valve (PSV) devicesHONEYWELL INT INC·Filed 2003·Granted Feb 27, 2007·0 cites·24 claims
- 3630US2003189227A1High speed SOI transistorsHONEYWELL INT INC·Filed 2002·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →