Inventor · disambiguated record
Pai-Hung Pan
Also filed as: PAN PAI · PAN PAI-HUNG
114 granted patents·2 pending applications·3,885 citations·filing 1985–2013
99Inventor score
Top patents by PatentIndex Score
116 records- 0198US6261964B1Material removal method for forming a structureMICRON TECHNOLOGY INC·Filed 1998·Granted Jul 17, 2001·309 cites·86 claims
- 0297US6191037B1Methods, apparatuses and substrate assembly structures for fabricating microelectronic components using mechanical and chemical-mechanical planarization processesMICRON TECHNOLOGY INC·Filed 1998·Granted Feb 20, 2001·185 cites·27 claims
- 0396US6514842B1Low resistance gate flash memoryMICRON TECHNOLOGY INC·Filed 2001·Granted Feb 4, 2003·104 cites·26 claims
- 0495US6436818B1Semiconductor structure having a doped conductive layerMICRON TECHNOLOGY INC·Filed 1999·Granted Aug 20, 2002·114 cites·17 claims
- 0594US6309975B1Methods of making implanted structuresMICRON TECHNOLOGY INC·Filed 1997·Granted Oct 30, 2001·83 cites·72 claims
- 0694US6288419B1Low resistance gate flash memoryMICRON TECHNOLOGY INC·Filed 1999·Granted Sep 11, 2001·103 cites·40 claims
- 0794US5925918AGate stack with improved sidewall integrityMICRON TECHNOLOGY INC·Filed 1997·Granted Jul 20, 1999·136 cites·9 claims
- 0894US5739066ASemiconductor processing methods of forming a conductive gate and lineMICRON TECHNOLOGY INC·Filed 1996·Granted Apr 14, 1998·103 cites·41 claims
- 0993US6599840B2Material removal method for forming a structureMICRON TECHNOLOGY INC·Filed 2002·Granted Jul 29, 2003·54 cites·51 claims
- 1093US6362086B2Forming a conductive structure in a semiconductor deviceMICRON TECHNOLOGY INC·Filed 1999·Granted Mar 26, 2002·108 cites·25 claims
- 1193US6198144B1Passivation of sidewalls of a word line stackMICRON TECHNOLOGY INC·Filed 1999·Granted Mar 6, 2001·97 cites·32 claims
- 1292US6461967B2Material removal method for forming a structureMICRON TECHNOLOGY INC·Filed 2001·Granted Oct 8, 2002·44 cites·28 claims
- 1392US6015997ASemiconductor structure having a doped conductive layerMICRON TECHNOLOGY INC·Filed 1997·Granted Jan 18, 2000·87 cites·22 claims
- 1492US5618751AMethod of making single-step trenches using resist fill and recessIBM·Filed 1996·Granted Apr 8, 1997·152 cites·20 claims
- 1592US5330935ALow temperature plasma oxidation processIBM·Filed 1992·Granted Jul 19, 1994·151 cites·10 claims
- 1691US6075274ASemiconductor devices having gate stack with improved sidewall integrityMICRON TECHNOLOGY INC·Filed 1999·Granted Jun 13, 2000·91 cites·24 claims
- 1790US5998290AMethod to protect gate stack material during source/drain reoxidationMICRON TECHNOLOGY INC·Filed 1998·Granted Dec 7, 1999·84 cites·19 claims
- 1889US6291868B1Forming a conductive structure in a semiconductor deviceMICRON TECHNOLOGY INC·Filed 1998·Granted Sep 18, 2001·76 cites·15 claims
- 1989US5521422ACorner protected shallow trench isolation deviceIBM·Filed 1994·Granted May 28, 1996·89 cites·10 claims
- 2088US5834358AIsolation regions and methods of forming isolation regionsMICRON TECHNOLOGY INC·Filed 1996·Granted Nov 10, 1998·71 cites·9 claims
- 2187US6596648B2Material removal method for forming a structureMICRON TECHNOLOGY INC·Filed 2002·Granted Jul 22, 2003·27 cites·38 claims
- 2287US6423620B2Semiconductor processing methods of forming contact openings, methods of forming memory circuitry, methods of forming electrical connections, and methods of forming dynamic random access memory dram circuitryMICRON TECHNOLOGY INC·Filed 2001·Granted Jul 23, 2002·23 cites·11 claims
- 2387US5801413AContainer-shaped bottom electrode for integrated circuit capacitor with partially rugged surfaceMICRON TECHNOLOGY INC·Filed 1995·Granted Sep 1, 1998·55 cites·5 claims
- 2487US5412246ALow temperature plasma oxidation processIBM·Filed 1994·Granted May 2, 1995·93 cites·8 claims
- 2586US5736455AMethod for passivating the sidewalls of a tungsten word lineMICRON TECHNOLOGY INC·Filed 1995·Granted Apr 7, 1998·69 cites·27 claims
- 2684US5854127AMethod of forming a contact landing padMICRON TECHNOLOGY INC·Filed 1997·Granted Dec 29, 1998·53 cites·1 claims
- 2783US6395620B1Method for forming a planar surface over low density field areas on a semiconductor waferMICRON TECHNOLOGY INC·Filed 1996·Granted May 28, 2002·70 cites·30 claims
- 2883US6259127B1Integrated circuit container having partially rugged surfaceMICRON TECHNOLOGY INC·Filed 1998·Granted Jul 10, 2001·41 cites·11 claims
- 2981US6596642B2Material removal method for forming a structureMICRON TECHNOLOGY INC·Filed 2002·Granted Jul 22, 2003·18 cites·21 claims
- 3081US6455394B1Method for trench isolation by selective deposition of low temperature oxide filmsMICRON TECHNOLOGY INC·Filed 1998·Granted Sep 24, 2002·55 cites·27 claims
- 3181US6429496B1Ion-assisted oxidation methods and the resulting structuresMICRON TECHNOLOGY INC·Filed 1999·Granted Aug 6, 2002·38 cites·9 claims
- 3281US5434109AOxidation of silicon nitride in semiconductor devicesIBM·Filed 1993·Granted Jul 18, 1995·76 cites·17 claims
- 3380US6057200AMethod of making a field effect transistor having an elevated source and an elevated drainMICRON TECHNOLOGY INC·Filed 1997·Granted May 2, 2000·38 cites·15 claims
- 3480US5930641AMethod for forming an integrated circuit container having partially rugged surfaceMICRON TECHNOLOGY INC·Filed 1998·Granted Jul 27, 1999·35 cites·22 claims
- 3579US6596595B1Forming a conductive structure in a semiconductor deviceMICRON TECHNOLOGY INC·Filed 2000·Granted Jul 22, 2003·16 cites·24 claims
- 3678US5637518AMethod of making a field effect transistor having an elevated source and an elevated drainMICRON TECHNOLOGY INC·Filed 1995·Granted Jun 10, 1997·37 cites·17 claims
- 3776US6391793B2Compositions for etching silicon with high selectivity to oxides and methods of using sameMICRON TECHNOLOGY INC·Filed 1999·Granted May 21, 2002·40 cites·31 claims
- 3875US6660180B2Compositions for etching silicon with high selectivity to oxides and methods of using sameMICRON TECHNOLOGY INC·Filed 2001·Granted Dec 9, 2003·18 cites·11 claims
- 3975US5739064ASecond implanted matrix for agglomeration control and thermal stabilityMICRON TECHNOLOGY INC·Filed 1996·Granted Apr 14, 1998·31 cites·36 claims
- 4074US6744108B1Doped silicon diffusion barrier regionMICRON TECHNOLOGY INC·Filed 2000·Granted Jun 1, 2004·14 cites·62 claims
- 4174US5712186AMethod for growing field oxide to minimize birds' beak lengthMICRON TECHNOLOGY INC·Filed 1996·Granted Jan 27, 1998·34 cites·27 claims
- 4273US8790982B2Methods for reoxidizing an oxide and for fabricating semiconductor devicesMICRON TECHNOLOGY INC·Filed 2013·Granted Jul 29, 2014·3 cites·20 claims
- 4373US6355580B1Ion-assisted oxidation methods and the resulting structuresMICRON TECHNOLOGY INC·Filed 1998·Granted Mar 12, 2002·25 cites·56 claims
- 4473US6322634B1Shallow trench isolation structure without corner exposureMICRON TECHNOLOGY INC·Filed 1997·Granted Nov 27, 2001·30 cites·20 claims
- 4573US6067680ASemiconductor processing method of forming a conductively doped semiconductive material plug within a contact openingMICRON TECHNOLOGY INC·Filed 1998·Granted May 30, 2000·42 cites·9 claims
- 4673US5874351ASputtered metal silicide film stress control by grain boundary stuffingMICRON TECNOLOGY INC·Filed 1996·Granted Feb 23, 1999·36 cites·26 claims
- 4773US5763923ACompound PVD target material for semiconductor metallizationMICRON TECHNOLOGY INC·Filed 1996·Granted Jun 9, 1998·28 cites·25 claims
- 4873US5741738AMethod of making corner protected shallow trench field effect transistorIBM·Filed 1996·Granted Apr 21, 1998·41 cites·14 claims
- 4973US5716535AMethods and etchants for etching oxides of silicon with low selectivityMICRON TECHNOLOGY INC·Filed 1996·Granted Feb 10, 1998·33 cites·29 claims
- 5072US6593616B2Buried bit line memory circuitryMICRON TECHNOLOGY INC·Filed 2002·Granted Jul 15, 2003·14 cites·21 claims
Showing the top 50 of 116 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →