Inventor · disambiguated record
Pankwi Park
Also filed as: PARK PANKWI
28 granted patents·11 pending applications·35 citations·filing 2013–2025
94Inventor score
Top patents by PatentIndex Score
39 records- 0196US11688778B2Semiconductor device including three-dimensional field-effect transistor with curved multi-layered source/drain patternSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jun 27, 2023·4 cites·20 claims
- 0295US11948942B2Integrated circuit deviceSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Apr 2, 2024·2 cites·20 claims
- 0394US12027596B2Semiconductor device with source/drain pattern including buffer layerSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Jul 2, 2024·2 cites·20 claims
- 0494US11888026B2Integrated circuit deviceSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jan 30, 2024·3 cites·20 claims
- 0594US11069681B2Integrated circuit deviceSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Jul 20, 2021·11 cites·19 claims
- 0693US11631674B2Integrated circuit deviceSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Apr 18, 2023·2 cites·20 claims
- 0786US9252235B2Semiconductor devices and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Feb 2, 2016·6 cites·14 claims
- 0885US12324195B2Multi-channel field effect transistors with enhanced multi-layered source/drain regionsSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Jun 3, 2025·1 cites·20 claims
- 0982US12249606B2Integrated circuit deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Granted Mar 11, 2025·0 cites·20 claims
- 1080US12453141B2Semiconductor device including barrier layer between active region and semiconductor layer and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Granted Oct 21, 2025·0 cites·20 claims
- 1179US12396224B2Integrated circuit deviceSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Aug 19, 2025·0 cites·19 claims
- 1279US11322583B2Semiconductor device including barrier layer between active region and semiconductor layer and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted May 3, 2022·1 cites·20 claims
- 1378US11177346B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Nov 16, 2021·2 cites·20 claims
- 1478US2025287656A1Integrated circuit deviceSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 1575US12119347B2Method of manufacturing a horizontal-nanosheet field-effect transistorSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Oct 15, 2024·0 cites·20 claims
- 1675US11264381B2Integrated circuit device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Mar 1, 2022·1 cites·20 claims
- 1772US11996443B2Semiconductor device including barrier layer between active region and semiconductor layer and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted May 28, 2024·0 cites·17 claims
- 1869US11710738B2Integrated circuit deviceSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jul 25, 2023·0 cites·20 claims
- 1969US11676963B2Integrated circuit device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Jun 13, 2023·0 cites·20 claims
- 2061US2025169152A1Integrated circuit deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 2160US2025194186A1Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 2260US2025220960A1Semiconductor deviceSAMSUNGELECTRONICSCO LTD·Filed 2024·Application pending·0 cites
- 2357US10181525B2Semiconductor devices and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jan 15, 2019·0 cites·26 claims
- 2456US12426359B2Semiconductor device including source/drain regions having triangular tip regionsSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Sep 23, 2025·0 cites·19 claims
- 2556US2024105776A1Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 2655US12477796B2Semiconductor device including a vertically stacked channel pattern and method for manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Nov 18, 2025·0 cites·18 claims
- 2755US12453148B2Integrated circuit device including field-effect transistor with controlled sizes and configurationsSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Oct 21, 2025·0 cites·20 claims
- 2855US2025040188A1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 2955US2025107185A1Semiconductor devices and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 3054US12382716B2Integrated circuit deviceSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Aug 5, 2025·0 cites·22 claims
- 3154US12328921B2Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Jun 10, 2025·0 cites·20 claims
- 3253US12471345B2Semiconductor device and method for manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Nov 11, 2025·0 cites·20 claims
- 3353US9548389B2Semiconductor devices and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Jan 17, 2017·0 cites·6 claims
- 3452US2024030286A1Integrated circuit devicesSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 3551US12224357B2Semiconductor transistor device including multiple channel layers with different materialsSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Feb 11, 2025·0 cites·20 claims
- 3651US2023395662A1Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 3751US2024243188A1Integrated circuit device including a field-effect transistor and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 3844US2025234580A1Integrated circuit deviceSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 3939US10883173B2Gas storage cylinder, deposition system, and method of manufacturing semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Jan 5, 2021·0 cites·13 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →