Inventor · disambiguated record
Pan-Kwi Park
Also filed as: PARK PAN KWI
26 granted patents·10 pending applications·61 citations·filing 2009–2024
94Inventor score
Top patents by PatentIndex Score
36 records- 0192US9257520B2Semiconductor devices including a stressor in a recess and methods of forming the sameSHIN DONG-SUK·Filed 2015·Granted Feb 9, 2016·7 cites·9 claims
- 0291US9985036B2Semiconductor device having embedded strain-inducing pattern and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted May 29, 2018·6 cites·20 claims
- 0390US9768300B2Semiconductor devices including a stressor in a recess and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Sep 19, 2017·5 cites·20 claims
- 0489US9129952B2Semiconductor devices including a stressor in a recess and methods of forming the sameSHIN DONG-SUK·Filed 2013·Granted Sep 8, 2015·8 cites·30 claims
- 0589US7704867B2Method of manufacturing semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Apr 27, 2010·14 cites·16 claims
- 0687US9502563B2Semiconductor device having embedded strain-inducing pattern and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Nov 22, 2016·4 cites·28 claims
- 0784US12021131B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jun 25, 2024·1 cites·18 claims
- 0883US8907426B2Semiconductor device having embedded strain-inducing pattern and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Dec 9, 2014·5 cites·20 claims
- 0980US10312152B2Field effect transistor with stacked nanowire-like channels and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Jun 4, 2019·2 cites·20 claims
- 1080US8502286B2Etch stop layers and methods of forming the sameLIM HA-JIN·Filed 2010·Granted Aug 6, 2013·6 cites·23 claims
- 1173US12142690B2Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2024·Granted Nov 12, 2024·0 cites·20 claims
- 1273US2024332424A1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 1372US12289908B2Semiconductor device having multi-bridge channel field-effect transistor including source/drain pattern with a plurality of semiconductor patternsSAMSUNG ELECTRONICS CO LTD·Filed 2024·Granted Apr 29, 2025·0 cites·20 claims
- 1464US12040402B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Jul 16, 2024·0 cites·12 claims
- 1563US11942551B2Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Mar 26, 2024·0 cites·20 claims
- 1662US2025331237A1Semiconductor device including a multi-bridge channel field-effect transistorSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 1759US2024194786A1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 1857US8227308B2Method of fabricating semiconductor integrated circuit deviceLIM HA-JIN·Filed 2009·Granted Jul 24, 2012·1 cites·11 claims
- 1957US7977257B2Methods of manufacturing semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Jul 12, 2011·1 cites·15 claims
- 2056US9324834B2Semiconductor device having embedded strain-inducing pattern and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Apr 26, 2016·0 cites·14 claims
- 2155US9548301B2Semiconductor devices including a stressor in a recess and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jan 17, 2017·0 cites·22 claims
- 2254US12402400B2Multi gate semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Aug 26, 2025·0 cites·20 claims
- 2354US11990552B2Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted May 21, 2024·0 cites·17 claims
- 2454US8951853B1Method of forming semiconductor device using Si-H rich silicon nitride layerPARK PAN-KWI·Filed 2010·Granted Feb 10, 2015·1 cites·18 claims
- 2554US2023253449A1Semiconductor device and method for fabricating thereofSAMSUNG ELECTRONICS CO LTD·Filed 2022·Application pending·0 cites
- 2653US2024021675A1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 2751US2023056095A1Semiconductor device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Application pending·0 cites
- 2851US2024038840A1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 2948US2022181498A1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2021·Application pending·0 cites
- 3045US9793399B2Semiconductor device having insulating pattern and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Oct 17, 2017·0 cites·20 claims
- 3141US10790133B2Precleaning apparatus and substrate processing systemSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Sep 29, 2020·0 cites·13 claims
- 3240US2020194235A1Apparatus for manufacturing semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2019·Application pending·0 cites
- 3337US11821106B2Semiconductor process chamber including lower volume upper domeSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Nov 21, 2023·0 cites·20 claims
- 3436US9583592B2Methods of manufacturing semiconductor devicesPARK PAN-KWI·Filed 2015·Granted Feb 28, 2017·0 cites·20 claims
- 3536US8772173B2Method of manufacturing semiconductor deviceYU HYUN-KWAN·Filed 2012·Granted Jul 8, 2014·0 cites·18 claims
- 3636US2010171182A1Method of forming a semiconductor device having selective stress relaxation of etch stop layerSHIN DONG-SUK·Filed 2010·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →