Inventor · disambiguated record
Panjae Park
Also filed as: PARK PANJAE
7 granted patents·20 pending applications·26 citations·filing 2015–2024
76Inventor score
Top patents by PatentIndex Score
27 records- 0193US9704862B2Semiconductor devices and methods for manufacturing the samePARK PANJAE·Filed 2015·Granted Jul 11, 2017·24 cites·19 claims
- 0276US10242984B2Semiconductor devices and methods for manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Mar 26, 2019·2 cites·17 claims
- 0364US12494430B2Integrated circuit devices including lower interconnect metal layers at cell boundaries and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Granted Dec 9, 2025·0 cites·16 claims
- 0464US12051696B2Method of fabricating a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Jul 30, 2024·0 cites·17 claims
- 0559US11387234B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Jul 12, 2022·0 cites·20 claims
- 0659US2025167110A1Cell block for high-performance semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 0759US2025132256A1Integrated circuit devices having dual power sourcesSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 0859US2025118676A1Semiconductor device including metal lines having different metal pitchesSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 0959US2025159980A1Stacked transistor device formed using multi-layer dummy gateSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 1058US2025254988A1Semiconductor device including stacked forksheet transistor structure with isolation wallSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 1158US2025063782A1Integrated circuit device including wimpy transistor stack with thick source/drain isolation layer and methods of forming ting the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 1258US2025063811A1Integrated circuit device including wimpy transistor stack with thick intergate insulator and methods of forming ting the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 1358US2025031456A1Cell architecture of semiconductor device including semiconductor cells connected based on backside power distribution networkSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 1457US2024290853A1Semiconductor device including extended backside contact structureSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 1557US2025159979A1Semiconductor device including contact structures having different dimensionsSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 1657US2024421154A1Integrated circuit devices including a backside power distribution network structure and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 1757US2024355878A1Integrated circuit devices including stacked transistors and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 1856US2024363491A1Integrated circuit devices including a back side power distribution network structure and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 1955US2024304520A1Semiconductor cell architecture including backside power railsSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 2055US2024313000A1Interconnects at back side of semiconductor device for signal routingSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 2155US2024290690A1Semiconductor device including bspdn structures in small-cpp area and large-cpp areaSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 2254US12475293B2Cell including individual source regions and integrated circuit including the cellSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Nov 18, 2025·0 cites·20 claims
- 2353US2024145343A1Cell architecture with center-line power rails for stacked field-effect transistorsSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 2452US2024282855A1Semiconductor device including 3d-stacked field-effect transistors having isolation structure between contact plugsSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 2551US2023343825A1Boundary gate structure for diffusion break in 3d-stacked semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2022·Application pending·0 cites
- 2648US11804480B2Integrated circuit chip including standard cellSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Oct 31, 2023·0 cites·20 claims
- 2747US2023378155A1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →