Inventor · disambiguated record

Pang-Yen Tsai

Also filed as: TSAI PANG-YEN

96 granted patents·19 pending applications·499 citations·filing 1993–2025

99Inventor score

Technology areasH10P H10D H10W E03D H01L

Files withTAIWAN SEMICONDUCTOR MFG CO LTD73 TAIWAN SEMICONDUCTOR MFG21 CHEN CHIEN HAO2 CHEN YUN-HSIU1 CHU CHE-TING1

Top patents by PatentIndex Score

115 records

0198US11626494B2Epitaxial backside contactTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 11, 2023·6 cites·20 claims
0298US11393924B2Structure and formation method of semiconductor device with high contact areaTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 19, 2022·6 cites·20 claims
0397US11855215B2Semiconductor device structure with high contact areaTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·3 cites·20 claims
0497US11605633B2Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 14, 2023·3 cites·20 claims
0597US7538387B2Stack SiGe for short channel improvementTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted May 26, 2009·85 cites·10 claims
0695US12230692B2Self-aligned inner spacer on gate-all-around structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 18, 2025·2 cites·20 claims
0794US8255843B2Method of manufacturing strained-silicon semiconductor deviceCHEN YUN-HSIU·Filed 2010·Granted Aug 28, 2012·94 cites·19 claims
0893US7465972B2High performance CMOS device designTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Dec 16, 2008·21 cites·6 claims
0992US11417764B2Interface profile control in epitaxial structures for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 16, 2022·2 cites·20 claims
1091US8629426B2Source/drain stressor having enhanced carrier mobility manufacturing sameLIN CHIN-HSIANG·Filed 2010·Granted Jan 14, 2014·11 cites·13 claims
1191US7816217B2Multi-step epitaxial process for depositing Si/SiGeTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Oct 19, 2010·17 cites·21 claims
1291US7528028B2Super anneal for process induced strain modulationTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted May 5, 2009·22 cites·18 claims
1389US10872906B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 22, 2020·4 cites·20 claims
1489US8927374B2Semiconductor device and fabrication method thereofSU LILLY·Filed 2011·Granted Jan 6, 2015·10 cites·20 claims
1589US8049277B2Epitaxy silicon on insulator (ESOI)TAIWAN SEMICONDUCTOR MFG·Filed 2010·Granted Nov 1, 2011·8 cites·17 claims
1689US7803690B2Epitaxy silicon on insulator (ESOI)TAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Sep 28, 2010·13 cites·20 claims
1787US8835267B2Semiconductor device and fabrication method thereofLEE YEN-RU·Filed 2011·Granted Sep 16, 2014·9 cites·20 claims
1886US12191393B2Low Ge isolated epitaxial layer growth over nano-sheet architecture design for RP reductionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 7, 2025·1 cites·20 claims
1986US12148807B2Backside contact structures with stacked metal silicide layers for source/drain region of fin field transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 19, 2024·1 cites·20 claims
2086US10998241B2Selective dual silicide formation using a maskless fabrication process flowTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 4, 2021·3 cites·20 claims
2186US9276117B1Structure and method and FinFET deviceTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Mar 1, 2016·7 cites·20 claims
2285US11749682B2Selective dual silicide formation using a maskless fabrication process flowTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 5, 2023·1 cites·20 claims
2385US10847413B2Method of forming contact plugs for semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 24, 2020·3 cites·20 claims
2485US10700066B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 30, 2020·2 cites·20 claims
2584US7615426B2PMOS transistor with discontinuous CESL and method of fabricationTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Nov 10, 2009·11 cites·19 claims
2684US2025324634A1Channel structures for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
2782US12369341B2Channel structures for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 22, 2025·0 cites·20 claims
2881US12272752B2Gate all around (GAA) transistor structures having a plurality of semiconductor nanostructuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 8, 2025·0 cites·20 claims
2981US12080766B2Epitaxial backside contactTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 3, 2024·0 cites·20 claims
3080US11984450B2Semiconductor device having spacer residueTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 14, 2024·0 cites·20 claims
3180US11798945B2Semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 24, 2023·0 cites·20 claims
3280US9029246B2Methods of forming epitaxial structuresTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted May 12, 2015·4 cites·20 claims
3380US7592619B2Epitaxy layer and method of forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Sep 22, 2009·14 cites·10 claims
3479US10515849B2Semiconductor device, interconnection structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 24, 2019·2 cites·20 claims
3579US2024363704A1Epitaxial backside contactTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
3679US2024363751A1Interface profile control in epitaxial structures for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
3779US2024347611A1Source/Drain Feature to Contact InterfacesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
3879US2025329617A1Contact plugs for semiconductor device and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
3977US12431412B2Contact plugs for semiconductor device and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 30, 2025·0 cites·20 claims
4077US12068414B2Interface profile control in epitaxial structures for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 20, 2024·0 cites·20 claims
4177US11715738B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 1, 2023·0 cites·20 claims
4277US2025194203A1Self-aligned inner spacer on gate-all-around structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
4376US12369386B2Epitaxial layers in source/drain contacts and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 22, 2025·0 cites·20 claims
4476US2025089295A1Low ge isolated epitaxial layer growth over nano-sheet architecture design for rp reductionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
4575US12132082B2Channel mobility improvementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 29, 2024·0 cites·20 claims
4675US11610888B2Semiconductor device having cap layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 21, 2023·0 cites·20 claims
4775US11410890B2Epitaxial layers in source/drain contacts and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Aug 9, 2022·1 cites·20 claims
4875US7175709B2Epitaxy layer and method of forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Feb 13, 2007·9 cites·12 claims
4975US2024387291A1Selective dual silicide formation using a maskless fabrication process flowTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
5075US2025359195A1Strained nanosheets on silicon-on insulator substrateTAIWAN SEMICONDUCTOR COMPANY LTD·Filed 2025·Application pending·0 cites

Showing the top 50 of 115 patent records by PatentIndex Score.

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →