Inventor · disambiguated record
Pei Ying Lai
Also filed as: LAI PEI YING
8 granted patents·14 pending applications·6 citations·filing 2020–2025
78Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD22
Top patents by PatentIndex Score
22 records- 0195US12040365B1Incorporating nitrogen in dipole engineering for multi-threshold voltage applications in stacked device structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 16, 2024·4 cites·20 claims
- 0292US11996453B2Introducing fluorine to gate after work function metal depositionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 28, 2024·2 cites·20 claims
- 0383US2025331282A1Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0481US12426332B2Introducing fluorine to gate after work function metal depositionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Sep 23, 2025·0 cites·20 claims
- 0580US2025357105A1Aluminum nitride dipole dopant film for tuning multi-vt devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0679US2025351420A1Threshold voltage tuning of nfet via implementation of an aluminum-free conductive layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0779US2025311348A1Introducing fluorine to gate after work function metal depositionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0878US12376364B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 29, 2025·0 cites·20 claims
- 0978US2025349545A1Volume-less fluorine incorporation methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1077US2025344423A1Treatment for tuning threshold voltages of transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1176US2024347606A1Incorporating Nitrogen in Dipole Engineering for Multi-Threshold Voltage Applications in Stacked Device StructuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1274US11915979B2Gate structures in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 27, 2024·0 cites·20 claims
- 1374US2024290630A1Incorporating Nitrogen in Dipole Engineering for Multi-Threshold Voltage Applications in Stacked Device StructuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1472US2024379449A1Semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1571US2025133759A1Treatment for tuning threshold voltages of transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1670US2024332004A1Aluminum Nitride Dipole Dopant Film for Tuning Multi-VT DevicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1769US2024322040A1Threshold voltage tuning of nfet via implementation of an aluminum-free conductive layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1868US11462626B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 4, 2022·0 cites·20 claims
- 1967US2024071767A1Volume-less Fluorine Incorporation MethodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2066US12336273B2Method for forming semiconductor structure using fluorine to treat gate stackTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 17, 2025·0 cites·20 claims
- 2158US2025259847A1Threshold Voltage Tuning Using Aluminum Layer as Dipole MaterialTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2248US11756832B2Gate structures in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 12, 2023·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →