Inventor · disambiguated record

Pei-Hsun Wang

Also filed as: WANG PEI-HSUN

46 granted patents·5 pending applications·63 citations·filing 2018–2025

97Inventor score

Technology areasH10P H10D H10W B82Y H01L

Files withTAIWAN SEMICONDUCTOR MFG CO LTD50 PARABELLUM STRATEGIC OPPORTUNITIES FUND LLC1

Top patents by PatentIndex Score

51 records

0198US12148836B2Gate-all-around structure and methods of forming the samePARABELLUM STRATEGIC OPPORTUNITIES FUND LLC·Filed 2023·Granted Nov 19, 2024·3 cites·20 claims
0298US11637207B2Gate-all-around structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 25, 2023·3 cites·20 claims
0397US11996483B2FET with wrap-around silicide and fabrication methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 28, 2024·2 cites·20 claims
0496US10923598B2Gate-all-around structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Feb 16, 2021·10 cites·20 claims
0595US11322409B2Multi-gate devices and method of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 3, 2022·3 cites·20 claims
0694US12119404B2Gate all around structure with additional silicon layer and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 15, 2024·1 cites·20 claims
0794US11695076B2FET with wrap-around silicide and fabrication methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 4, 2023·2 cites·20 claims
0894US11532521B2Dual channel gate all around transistor device and fabrication methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 20, 2022·2 cites·20 claims
0993US11158727B2Structure and method for gate-all-around device with extended channelTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 26, 2021·8 cites·20 claims
1093US10944009B2Methods of fabricating a FinFET device with wrap-around silicide source/drain structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 9, 2021·5 cites·20 claims
1192US11348836B2Semiconductor structure with nanostructure and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 31, 2022·2 cites·20 claims
1292US10804162B2Dual channel gate all around transistor device and fabrication methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 13, 2020·4 cites·20 claims
1391US11777033B2Transistors having vertical nanostructuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 3, 2023·2 cites·20 claims
1488US12439638B2FET with wrap-around silicide and fabrication methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Oct 7, 2025·0 cites·20 claims
1588US10727134B2Methods of fabricating semiconductor devices with gate-all-around structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 28, 2020·3 cites·20 claims
1686US12198986B2Dual channel gate all around transistor device and fabrication methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 14, 2025·0 cites·20 claims
1785US12148673B2FinFET devices and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 19, 2024·0 cites·20 claims
1885US10847426B2FinFET devices and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 24, 2020·2 cites·20 claims
1984US10811515B2Methods of fabricating semiconductor devices having air-gap spacersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Oct 20, 2020·2 cites·20 claims
2084US2024387287A1Finfet devices and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
2183US2025311262A1Self-aligned source/drain metal contacts and formation thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
2282US12211900B2Hybrid channel semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 28, 2025·0 cites·20 claims
2382US11121037B2Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 14, 2021·2 cites·20 claims
2481US11721594B2Dual channel gate all around transistor device and fabrication methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 8, 2023·0 cites·20 claims
2581US11302796B2Method of forming self-aligned source/drain metal contactsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 12, 2022·1 cites·20 claims
2681US2025142857A1Semiconductor devices having gate-all-around structure and methods of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
2780US11984361B2Multi-gate devices and method of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 14, 2024·0 cites·20 claims
2880US11205711B2Selective inner spacer implementationsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 21, 2021·2 cites·20 claims
2980US2024363440A1Hybrid source drain regions formed based on same fin and methods forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
3079US11855178B2Semiconductor devices having air-gapTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·0 cites·20 claims
3179US11776854B2Semiconductor structure with hybrid nanostructuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 3, 2023·0 cites·20 claims
3279US11735666B2Gate all around structure with additional silicon layer and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 22, 2023·0 cites·20 claims
3379US11139379B2Semiconductor structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 5, 2021·1 cites·20 claims
3478US11430891B2Gate all around structure with additional silicon layer and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 30, 2022·1 cites·20 claims
3577US11742387B2Hybrid channel semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 29, 2023·0 cites·20 claims
3677US11600529B2Multi-gate devices and method of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 7, 2023·0 cites·20 claims
3777US2025318179A1Transistors having vertical nanostructuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
3876US11430892B2Inner spacers for gate-all-around transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 30, 2022·1 cites·20 claims
3976US10825919B2Methods of fabricating semiconductor devices having gate-all-around structure with inner spacer last processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 3, 2020·1 cites·20 claims
4075US12382655B2Transistors having vertical nanostructuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 5, 2025·0 cites·20 claims
4174US12356645B2Self-aligned source/drain metal contactTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 8, 2025·0 cites·20 claims
4274US11837506B2FinFET devices and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 5, 2023·0 cites·20 claims
4373US12119270B2Hybrid source drain regions formed based on same fin and methods forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 15, 2024·0 cites·20 claims
4472US11251090B2Dual channel gate all around transistor device and fabrication methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 15, 2022·0 cites·20 claims
4571US11563104B2Semiconductor devices having air-gap spacersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 24, 2023·0 cites·20 claims
4668US12243780B2Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 4, 2025·0 cites·20 claims
4768US12218226B2Methods of fabricating semiconductor devices having gate-all-around structure with inner spacer last processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 4, 2025·0 cites·20 claims
4867US11335776B2Hybrid channel semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 17, 2022·0 cites·20 claims
4964US11049774B2Hybrid source drain regions formed based on same Fin and methods forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 29, 2021·0 cites·20 claims
5057US11855216B2Inner spacers for gate-all-around transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·0 cites·20 claims

Showing the top 50 of 51 patent records by PatentIndex Score.

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →