Inventor · disambiguated record
Perng-Fei Yuh
Also filed as: YUH PERNG-FEI
62 granted patents·42 pending applications·126 citations·filing 1990–2025
98Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD78LUXUL TECHNOLOGY INC11LUXUL TECH INC9YUH PERNG-FEI3MAGIC TECHNOLOGIES INC1
Top patents by PatentIndex Score
104 records- 0198US11450370B2Ferroelectric field-effect transistor (FeFET) memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 20, 2022·7 cites·20 claims
- 0297US11776595B2Memory device with source line controlTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 3, 2023·5 cites·19 claims
- 0397US11735280B2Memory device and operating method of the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 22, 2023·5 cites·20 claims
- 0497US11601117B1Sense amplifier for coupling effect reductionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 7, 2023·3 cites·19 claims
- 0596US11903188B2Memory devices, semiconductor devices, and methods of operating a memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 13, 2024·2 cites·20 claims
- 0696US11682433B2Multiple stack high voltage circuit for memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 20, 2023·4 cites·6 claims
- 0795US11688481B2Semiconductor memory devices with diode-connected MOSTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 27, 2023·2 cites·20 claims
- 0894US11810635B2Sense amplifier for coupling effect reductionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 7, 2023·1 cites·20 claims
- 0993US11664081B2Bit selection for power reduction in stacking structure during memory programmingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 30, 2023·2 cites·20 claims
- 1092US11276604B1Radical-activated etching of metal oxidesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 15, 2022·2 cites·20 claims
- 1192US8693273B2Reference averaging for MRAM sense amplifiersYUH PERNG-FEI·Filed 2012·Granted Apr 8, 2014·25 cites·18 claims
- 1290US12087378B2Bit selection for power reduction in stacking structure during memory programmingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 10, 2024·1 cites·20 claims
- 1390US2025372140A1FERROELECTRIC FIELD-EFFECT TRANSISTOR (FeFET) MEMORYTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1489US12347505B2Memory device and operating method of the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 1, 2025·0 cites·20 claims
- 1589US2025322873A1Non-volatile static random access memory (nvsram) with multiple magnetic tunnel junction cellsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1688US12389806B2MRAM cell and MRAMTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Aug 12, 2025·0 cites·20 claims
- 1788US12230338B2Semiconductor memory devices with diode-connected MOSTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Feb 18, 2025·0 cites·20 claims
- 1887US2025285694A1Memory device and operating method of the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1987US2025364034A1Second word line combined with y-mux signal in high voltage memory programTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2084US12417796B2Ferroelectric field-effect transistor (FeFET) memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 16, 2025·0 cites·20 claims
- 2184US2025323085A1Radical-activated etching of metal oxidesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2284US2025157501A1Sense amplifier for coupling effect reductionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2383US9589440B2Lamp tube and lamp fixture with sensing capabilityLUXUL TECH INC·Filed 2015·Granted Mar 7, 2017·11 cites·12 claims
- 2483US2025359074A1Memory devices and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2582US12380950B2Non-volatile static random access memory (NVSRAM) with multiple magnetic tunnel junction cellsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Aug 5, 2025·0 cites·20 claims
- 2682US11953927B2Bias generating devices and methods for generating biasTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 9, 2024·1 cites·20 claims
- 2782US2025356896A1Memory devices with dual-side access circuits and methods for operating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2881US12243599B2Merged bit lines for high density memory arrayTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Mar 4, 2025·0 cites·20 claims
- 2981US12210368B2Bias generating devices and methods for generating biasTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jan 28, 2025·0 cites·20 claims
- 3081US12190986B2Sense amplifier for coupling effect reductionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 7, 2025·0 cites·20 claims
- 3181US12002528B2Memory device and operating method of the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jun 4, 2024·0 cites·20 claims
- 3281US11955191B2Semiconductor memory devices with diode-connected MOSTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 9, 2024·0 cites·20 claims
- 3380US12211918B2Nanostructured channel regions for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 28, 2025·0 cites·20 claims
- 3480US11545218B2Nonvolatile SRAMTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 3, 2023·1 cites·20 claims
- 3579US2025182835A1Semiconductor memory devices with diode-connected mosTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3679US2025390131A1Push-pull low-dropout (ldo) voltage regulatorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3779US2025191666A1Merged bit lines for high density memory arrayTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3878US11984164B2Non-volatile static random access memory (nvSRAM) with multiple magnetic tunnel junction cellsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 14, 2024·0 cites·20 claims
- 3978US11963463B2MRAM cell and MRAMTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 16, 2024·0 cites·20 claims
- 4078US2025210107A1Nonvolatile sramTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4178US2024387673A1Nanostructured channel regions for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4277US11955190B2Merged bit lines for high density memory arrayTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 9, 2024·0 cites·20 claims
- 4377US11881242B2Ferroelectric field-effect transistor (FeFET) memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 23, 2024·0 cites·20 claims
- 4476US12387968B2Radical-activated etching of metal oxidesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 12, 2025·0 cites·20 claims
- 4576US12217822B2Memory device with source line controlTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 4, 2025·0 cites·19 claims
- 4675US12412620B2Second word line combined with y-mux signal in high voltage memory programTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 9, 2025·0 cites·20 claims
- 4775US12284804B2Memory devices, semiconductor devices, and methods of operations a memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Apr 22, 2025·0 cites·20 claims
- 4875US12094558B2Multiple stack high voltage circuit for memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 17, 2024·0 cites·20 claims
- 4975US2024395637A1Methods for real time etch process compensation controlTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 5075US2025174257A1Memory device with source line controlTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
Showing the top 50 of 104 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →