Inventor · disambiguated record
Philippe Rodriguez
Also filed as: RODRIGUEZ PHILIPPE
8 granted patents·2 pending applications·2 citations·filing 2012–2024
72Inventor score
Files withCOMMISSARIAT ENERGIE ATOMIQUE8BROTHIER MERYL1COMMISSARIAT A L’ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES1
Top patents by PatentIndex Score
10 records- 0168US10068674B2Jet spouted bed type reactor device having a specific profile for CVDBROTHIER MERYL·Filed 2012·Granted Sep 4, 2018·2 cites·8 claims
- 0264US2025183617A1Method for manufacturing an optoelectronic device comprising an intermetallic compoundCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2024·Application pending·0 cites
- 0352US11450776B2Contacting area on germaniumCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2020·Granted Sep 20, 2022·0 cites·21 claims
- 0451US11973118B2Method for forming ohmic contacts, particularly of Ni(GeSn) type implementing laser annealingCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2021·Granted Apr 30, 2024·0 cites·18 claims
- 0548US11600740B2Contacting area on germaniumCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2020·Granted Mar 7, 2023·0 cites·20 claims
- 0648US2024304451A1Method for forming an ohmic contact on a germanium-tin based layerCOMMISSARIAT A L’ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES·Filed 2024·Application pending·0 cites
- 0740US11698488B2Method for fabricating a heterostructure comprising active or passive elementary structure made of III-V material on the surface of a silicon-based substrateCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2018·Granted Jul 11, 2023·0 cites·19 claims
- 0834US11075501B2Process for producing a component comprising III-V materials and contacts compatible with silicon process flowsCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2017·Granted Jul 27, 2021·0 cites·30 claims
- 0933US10388653B2Formation of Ohmic contacts for a device provided with a region made of III-V material and a region made of another semiconductor materialCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2016·Granted Aug 20, 2019·0 cites·15 claims
- 1032US10361087B2Process for producing an intermetallic contact based on Ni on InxGa1-xAsCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2018·Granted Jul 23, 2019·0 cites·16 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →