Inventor · disambiguated record
Pierre C. Fazan
Also filed as: FAZAN PIERRE · FAZAN PIERRE C · WU ZHIQIANG
203 granted patents·4 pending applications·11,333 citations·filing 1990–2019
99Inventor score
Files withMICRON TECHNOLOGY INC172INNOVATIVE SILICON SA12FAZAN PIERRE6MICRON SEMICONDUCTOR INC6INNOVATIVE SILICON ISI SA4
Top patents by PatentIndex Score
207 records- 0199US7541616B2Semiconductor deviceINNOVATIVE SILICON ISI SA·Filed 2007·Granted Jun 2, 2009·257 cites·20 claims
- 0299US7514748B2Semiconductor deviceINNOVATIVE SILICON ISI SA·Filed 2005·Granted Apr 7, 2009·261 cites·26 claims
- 0399US7177175B2Low power programming technique for a floating body memory transistor, memory cell, and memory arrayINNOVATIVE SILICON SA·Filed 2006·Granted Feb 13, 2007·144 cites·24 claims
- 0499US7170807B2Data storage device and refreshing method for use with such deviceINNOVATIVE SILICON SA·Filed 2005·Granted Jan 30, 2007·686 cites·24 claims
- 0599US6925006B2Semiconductor deviceINNOVATIVE SILICON SA·Filed 2003·Granted Aug 2, 2005·254 cites·36 claims
- 0699US5801104AUniform dielectric film deposition on textured surfacesMICRON TECHNOLOGY INC·Filed 1995·Granted Sep 1, 1998·546 cites·18 claims
- 0799US5392189ACapacitor compatible with high dielectric constant materials having two independent insulative layers and the method for forming sameMICRON SEMICONDUCTOR INC·Filed 1993·Granted Feb 21, 1995·334 cites·20 claims
- 0899US5335138AHigh dielectric constant capacitor and method of manufactureMICRON SEMICONDUCTOR INC·Filed 1993·Granted Aug 2, 1994·351 cites·14 claims
- 0998US7280399B2Semiconductor deviceINNOVATIVE SILICON SA·Filed 2005·Granted Oct 9, 2007·59 cites·27 claims
- 1098US6969662B2Semiconductor deviceFAZAN PIERRE·Filed 2002·Granted Nov 29, 2005·383 cites·43 claims
- 1198US5506166AMethod for forming capacitor compatible with high dielectric constant materials having a low contact resistance layerMICRON TECHNOLOGY INC·Filed 1994·Granted Apr 9, 1996·260 cites·27 claims
- 1298US5278091AProcess to manufacture crown stacked capacitor structures with HSG-rugged polysilicon on all sides of the storage nodeMICRON SEMICONDUCTOR INC·Filed 1993·Granted Jan 11, 1994·178 cites·40 claims
- 1398US5013680AProcess for fabricating a DRAM array having feature widths that transcend the resolution limit of available photolithographyMICRON TECHNOLOGY INC·Filed 1990·Granted May 7, 1991·461 cites·21 claims
- 1497US7335934B2Integrated circuit device, and method of fabricating sameINNOVATIVE SILICON SA·Filed 2004·Granted Feb 26, 2008·140 cites·22 claims
- 1597US6937516B2Semiconductor deviceINNOVATIVE SILICON SA·Filed 2003·Granted Aug 30, 2005·71 cites·33 claims
- 1697US6873539B1Semiconductor deviceFiled 2003·Granted Mar 29, 2005·79 cites·33 claims
- 1797US6313035B1Chemical vapor deposition using organometallic precursorsMICRON TECHNOLOGY INC·Filed 1996·Granted Nov 6, 2001·238 cites·27 claims
- 1897US5381302ACapacitor compatible with high dielectric constant materials having a low contact resistance layer and the method for forming sameMICRON SEMICONDUCTOR INC·Filed 1993·Granted Jan 10, 1995·243 cites·15 claims
- 1996US5663088AMethod of forming a Ta2 O5 dielectric layer with amorphous diffusion barrier layer and method of forming a capacitor having a Ta2 O5 dielectric layer and amorphous diffusion barrier layerMICRON TECHNOLOGY INC·Filed 1995·Granted Sep 2, 1997·120 cites·14 claims
- 2096US5053351AMethod of making stacked E-cell capacitor DRAM cellMICRON TECHNOLOGY INC·Filed 1991·Granted Oct 1, 1991·150 cites·18 claims
- 2195US5814852AMethod of forming a Ta2 O5 dielectric layer, method of forming a capacitor having a Ta2 O5 dielectric layer, and capacitor constructionMICRON TECHNOLOGY INC·Filed 1996·Granted Sep 29, 1998·95 cites·27 claims
- 2295US5793076AScalable high dielectric constant capacitorMICRON TECHNOLOGY INC·Filed 1995·Granted Aug 11, 1998·100 cites·12 claims
- 2395US5597756AProcess for fabricating a cup-shaped DRAM capacitor using a multi-layer partly-sacrificial stackMICRON TECHNOLOGY INC·Filed 1995·Granted Jan 28, 1997·214 cites·29 claims
- 2495US5130885ADram cell in which a silicon-germanium alloy layer having a rough surface morphology is utilized for a capacitive surfaceMICRON TECHNOLOGY INC·Filed 1991·Granted Jul 14, 1992·108 cites·24 claims
- 2595US5122476ADouble DRAM cellMICRON TECHNOLOGY INC·Filed 1991·Granted Jun 16, 1992·106 cites·6 claims
- 2695US5061650AMethod for formation of a stacked capacitorMICRON TECHNOLOGY INC·Filed 1991·Granted Oct 29, 1991·142 cites·22 claims
- 2794US7239549B2Semiconductor deviceINNOVATIVE SILICON SA·Filed 2005·Granted Jul 3, 2007·17 cites·26 claims
- 2894US5478772AMethod for forming a storage cell capacitor compatible with high dielectric constant materialsMICRON TECHNOLOGY INC·Filed 1995·Granted Dec 26, 1995·179 cites·5 claims
- 2994US5236860ALateral extension stacked capacitorMICRON TECHNOLOGY INC·Filed 1991·Granted Aug 17, 1993·107 cites·31 claims
- 3093US5939333ASilicon nitride deposition methodMICRON TECHNOLOGY INC·Filed 1996·Granted Aug 17, 1999·107 cites·6 claims
- 3193US5866453AEtch process for aligning a capacitor structure and an adjacent contact corridorMICRON TECHNOLOGY INC·Filed 1995·Granted Feb 2, 1999·80 cites·17 claims
- 3293US5717250ASputter and CVD deposited titanium nitride barrier layer between a platinum layer and a polysilicon plugMICRON TECHNOLOGY INC·Filed 1996·Granted Feb 10, 1998·103 cites·29 claims
- 3393US5433794ASpacers used to form isolation trenches with improved cornersMICRON TECHNOLOGY INC·Filed 1992·Granted Jul 18, 1995·109 cites·7 claims
- 3493US5358894AOxidation enhancement in narrow masked field regions of a semiconductor waferMICRON TECHNOLOGY INC·Filed 1993·Granted Oct 25, 1994·114 cites·9 claims
- 3593US5187638ABarrier layers for ferroelectric and pzt dielectric on siliconMICRON TECHNOLOGY INC·Filed 1992·Granted Feb 16, 1993·157 cites·34 claims
- 3693US5087586AProcess for creating fully-recessed field isolation regions by oxidizing a selectively-grown epitaxial silicon layerMICRON TECHNOLOGY INC·Filed 1991·Granted Feb 11, 1992·162 cites·9 claims
- 3792US5489546AMethod of forming CMOS devices using independent thickness spacers in a split-polysilicon DRAM processMICRON TECHNOLOGY INC·Filed 1995·Granted Feb 6, 1996·114 cites·16 claims
- 3892US5354705ATechnique to fabricate a container structure with rough inner and outer surfacesMICRON SEMICONDUCTOR INC·Filed 1993·Granted Oct 11, 1994·97 cites·38 claims
- 3992US5170233AMethod for increasing capacitive surface area of a conductive material in semiconductor processing and stacked memory cell capacitorMICRON TECHNOLOGY INC·Filed 1991·Granted Dec 8, 1992·94 cites·29 claims
- 4091US5770500AProcess for improving roughness of conductive layerMICRON TECHNOLOGY INC·Filed 1996·Granted Jun 23, 1998·107 cites·33 claims
- 4191US5491356ACapacitor structures for dynamic random access memory cellsMICRON TECHNOLOGY INC·Filed 1993·Granted Feb 13, 1996·73 cites·23 claims
- 4291US5082797AMethod of making stacked textured container capacitorMICRON TECHNOLOGY INC·Filed 1991·Granted Jan 21, 1992·99 cites·15 claims
- 4390US6017789AMethod of forming a Ta2 O5 dielectric layer with amorphous diffusion barrier layer and method of forming a capacitor having a b. Ta.su2 O5 dielectric layer with amorphous diffusion barrier layerMICRON TECHNOLOGY INC·Filed 1997·Granted Jan 25, 2000·58 cites·11 claims
- 4490US5156987AHigh performance thin film transistor (TFT) by solid phase epitaxial regrowthMICRON TECHNOLOGY INC·Filed 1991·Granted Oct 20, 1992·126 cites·10 claims
- 4589US7061050B2Semiconductor device utilizing both fully and partially depleted devicesINNOVATIVE SILICON SA·Filed 2003·Granted Jun 13, 2006·43 cites·20 claims
- 4689US5959327ACapacitor compatible with high dielectric constant materials having a low contact resistance layer and the method for forming sameMICRON TECHNOLOGY INC·Filed 1995·Granted Sep 28, 1999·80 cites·8 claims
- 4789US5057888ADouble DRAM cellMICRON TECHNOLOGY INC·Filed 1991·Granted Oct 15, 1991·56 cites·16 claims
- 4889US5049517AMethod for formation of a stacked capacitorMICRON TECHNOLOGY INC·Filed 1990·Granted Sep 17, 1991·85 cites·27 claims
- 4989US5043780ADRAM cell having a texturized polysilicon lower capacitor plate for increased capacitanceMICRON TECHNOLOGY INC·Filed 1990·Granted Aug 27, 1991·70 cites·5 claims
- 5088US7732816B2Semiconductor deviceINNOVATIVE SILICON ISI SA·Filed 2007·Granted Jun 8, 2010·7 cites·20 claims
Showing the top 50 of 207 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →