Inventor · disambiguated record
Pierguido Garofalo
Also filed as: GAROFALO PIERGUIDO
16 granted patents·4 pending applications·48 citations·filing 2007–2024
91Inventor score
Top patents by PatentIndex Score
20 records- 0194US9893723B1Apparatuses and methods for reducing off state leakage currentsMICRON TECHNOLOGY INC·Filed 2016·Granted Feb 13, 2018·13 cites·12 claims
- 0286US11942958B2Method for compensating electrical device variabilities in configurable-output circuit and deviceMICRON TECHNOLOGY INC·Filed 2022·Granted Mar 26, 2024·1 cites·20 claims
- 0386US10164624B2Apparatuses for reducing off state leakage currentsMICRON TECHNOLOGY INC·Filed 2017·Granted Dec 25, 2018·4 cites·20 claims
- 0481US7940590B2Electronic device comprising non volatile memory cells and corresponding programming methodMARTINELLI ANDREA·Filed 2009·Granted May 10, 2011·9 cites·10 claims
- 0576US11387836B2Method for compensating electrical device variabilities in configurable-output circuit and deviceMICRON TECHNOLOGY INC·Filed 2019·Granted Jul 12, 2022·2 cites·25 claims
- 0672US7512032B2Electronic device comprising non volatile memory cells with optimized programming and corresponding programming methodMARTINELLI ANDREA·Filed 2007·Granted Mar 31, 2009·6 cites·36 claims
- 0772US2024223197A1Method for Compensating Electrical Device Variabilities in Configurable-Output Circuit and DeviceMICRON TECHNOLOGY INC·Filed 2024·Application pending·0 cites
- 0866US11942151B2Current references for memory cellsMICRON TECHNOLOGY INC·Filed 2022·Granted Mar 26, 2024·0 cites·20 claims
- 0965US8995161B2Apparatus and methods to perform read-while write (RWW) operationsBARKLEY GERALD JOHN·Filed 2011·Granted Mar 31, 2015·3 cites·10 claims
- 1065US7965561B2Row selector occupying a reduced device area for semiconductor memory devicesMICRON TECHNOLOGY INC·Filed 2007·Granted Jun 21, 2011·6 cites·20 claims
- 1165US7649791B2Non volatile memory device architecture and corresponding programming methodMARTINELLI ANDREA·Filed 2007·Granted Jan 19, 2010·4 cites·19 claims
- 1265US2024203490A1Current references for memory cellsMICRON TECHNOLOGY INC·Filed 2024·Application pending·0 cites
- 1357US11854647B2Voltage level shifter transition time reductionMICRON TECHNOLOGY INC·Filed 2021·Granted Dec 26, 2023·0 cites·23 claims
- 1452US11881253B2Average reference voltage for sensing memoryMICRON TECHNOLOGY INC·Filed 2021·Granted Jan 23, 2024·0 cites·20 claims
- 1551US10560085B2Apparatuses for reducing off state leakage currentsMICRON TECHNOLOGY INC·Filed 2018·Granted Feb 11, 2020·0 cites·20 claims
- 1648US10885945B2Apparatus and methods to perform read-while write (RWW) operationsMICRON TECHNOLOGY INC·Filed 2017·Granted Jan 5, 2021·0 cites·14 claims
- 1747US2024170049A1Memory device having unity buffers with output current limitersMICRON TECHNOLOGY INC·Filed 2023·Application pending·0 cites
- 1845US9767857B2Apparatus and methods to perform read-while write (RWW) operationsMICRON TECHNOLOGY INC·Filed 2015·Granted Sep 19, 2017·0 cites·13 claims
- 1944US8284623B2Electronic device comprising non volatile memory cells and corresponding programming methodMARTINELLI ANDREA·Filed 2011·Granted Oct 9, 2012·0 cites·14 claims
- 2035US2007223168A1Method for locally suppressing a disturbance of a reference lineST MICROELECTRONICS SRL·Filed 2007·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →