Inventor · disambiguated record
Pinghai Hao
Also filed as: HAO PINGHAI
47 granted patents·4 pending applications·231 citations·filing 2003–2024
97Inventor score
Top patents by PatentIndex Score
51 records- 0194US7786507B2Symmetrical bi-directional semiconductor ESD protection deviceTEXAS INSTRUMENTS INC·Filed 2009·Granted Aug 31, 2010·32 cites·25 claims
- 0292US7968936B2Quasi-vertical gated NPN-PNP ESD protection deviceTEXAS INSTRUMENTS INC·Filed 2007·Granted Jun 28, 2011·20 cites·25 claims
- 0389US7598547B2Low noise vertical variable gate control voltage JFET device in a BiCMOS process and methods to build this deviceTEXAS INSTRUMENTS INC·Filed 2006·Granted Oct 6, 2009·18 cites·1 claims
- 0484US2025063755A1Gallium nitride transistor with a doped regionTEXAS INSTRUMENTS INC·Filed 2024·Application pending·0 cites
- 0583US12166119B2Gallium nitride transistor with a doped regionTEXAS INSTRUMENTS INC·Filed 2023·Granted Dec 10, 2024·0 cites·18 claims
- 0682US9741718B2High voltage CMOS with triple gate oxideTEXAS INSTRUMENTS INC·Filed 2015·Granted Aug 22, 2017·3 cites·8 claims
- 0780US10134596B1Recessed solid state apparatusesTEXAS INSTRUMENTS INC·Filed 2017·Granted Nov 20, 2018·2 cites·20 claims
- 0880US7939863B2Area efficient 3D integration of low noise JFET and MOS in linear bipolar CMOS processTEXAS INSTRUMENTS INC·Filed 2009·Granted May 10, 2011·8 cites·19 claims
- 0980US7208364B2Methods of fabricating high voltage devicesTEXAS INSTRUMENTS INC·Filed 2005·Granted Apr 24, 2007·9 cites·12 claims
- 1078US7235451B2Drain extended MOS devices with self-aligned floating region and fabrication methods thereforTEXAS INSTRUMENTS INC·Filed 2003·Granted Jun 26, 2007·25 cites·5 claims
- 1178US7018880B2Method for manufacturing a MOS transistor having reduced 1/f noiseTEXAS INSTRUMENTS INC·Filed 2003·Granted Mar 28, 2006·26 cites·19 claims
- 1277US8530296B2High voltage transistor using diluted drainTEXAS INSTRUMENTS INC·Filed 2013·Granted Sep 10, 2013·3 cites·10 claims
- 1377US6861303B2JFET structure for integrated circuit and fabrication methodTEXAS INSTRUMENTS INC·Filed 2003·Granted Mar 1, 2005·21 cites·25 claims
- 1476US11067620B2HEMT wafer probe current collapse screeningTEXAS INSTRUMENTS INC·Filed 2019·Granted Jul 20, 2021·1 cites·20 claims
- 1576US9076760B2JFET having width defined by trench isolationHU BINGHUA·Filed 2012·Granted Jul 7, 2015·4 cites·17 claims
- 1674US11769824B2Gallium nitride transistor with a doped regionTEXAS INSTRUMENTS INC·Filed 2021·Granted Sep 26, 2023·0 cites·22 claims
- 1774US9865507B2Low-cost CMOS structure with dual gate dielectrics and method of forming the CMOS structureTEXAS INSTRUMENTS INC·Filed 2016·Granted Jan 9, 2018·1 cites·11 claims
- 1873US8878283B2Quasi-vertical gated NPN-PNP ESD protection deviceDENISON MARIE·Filed 2011·Granted Nov 4, 2014·3 cites·6 claims
- 1973US7268394B2JFET structure for integrated circuit and fabrication methodTEXAS INSTRUMENTS INC·Filed 2005·Granted Sep 11, 2007·5 cites·16 claims
- 2073US7005354B2Depletion drain-extended MOS transistors and methods for making the sameTEXAS INSTRUMENTS INC·Filed 2003·Granted Feb 28, 2006·18 cites·18 claims
- 2171US10714474B2High voltage CMOS with triple gate oxideTEXAS INSTRUMENTS INC·Filed 2017·Granted Jul 14, 2020·1 cites·14 claims
- 2271US7670888B2Low noise JFETTEXAS INSTRUMENTS INC·Filed 2007·Granted Mar 2, 2010·4 cites·19 claims
- 2367US7989853B2Integration of high voltage JFET in linear bipolar CMOS processTEXAS INSTRUMENTS INC·Filed 2009·Granted Aug 2, 2011·3 cites·18 claims
- 2463US10964803B2Gallium nitride transistor with a doped regionTEXAS INSTRUMENTS INC·Filed 2018·Granted Mar 30, 2021·0 cites·11 claims
- 2563US9305688B2Single photomask high precision thin film resistorTEXAS INSTRUMENTS INC·Filed 2013·Granted Apr 5, 2016·1 cites·11 claims
- 2662US7745274B2Gate self aligned low noise JFETTEXAS INSTRUMENTS INC·Filed 2007·Granted Jun 29, 2010·2 cites·22 claims
- 2760US10312095B1Recessed solid state apparatusesTEXAS INSTRUMENTS INC·Filed 2018·Granted Jun 4, 2019·0 cites·20 claims
- 2859US9842895B2Single photomask high precision thin film resistorTEXAS INSTRUMENTS INC·Filed 2016·Granted Dec 12, 2017·0 cites·10 claims
- 2957US9064726B2Low-cost CMOS structure with dual gate dielectrics and method of forming the CMOS structureTEXAS INSTRUMENTS INC·Filed 2013·Granted Jun 23, 2015·0 cites·6 claims
- 3056US9431302B2Low-cost CMOS structure with dual gate dielectrics and method of forming the CMOS structureTEXAS INSTRUMENTS INC·Filed 2015·Granted Aug 30, 2016·0 cites·5 claims
- 3156US9412668B2Low-cost CMOS structure with dual gate dielectrics and method of forming the CMOS structureTEXAS INSTRUMENTS INC·Filed 2015·Granted Aug 9, 2016·0 cites·9 claims
- 3254US7244651B2Fabrication of an OTP-EPROM having reduced leakage currentTEXAS INSTRUMENTS INC·Filed 2003·Granted Jul 17, 2007·6 cites·23 claims
- 3353US9117687B2High voltage CMOS with triple gate oxideTEXAS INSTRUMENTS INC·Filed 2012·Granted Aug 25, 2015·0 cites·13 claims
- 3452US6794700B1Capacitor having a dielectric layer including a group 17 elementTEXAS INSTRUMENTS INC·Filed 2003·Granted Sep 21, 2004·3 cites·12 claims
- 3551US9117691B2Low cost transistorsTEXAS INSTRUMENTS INC·Filed 2013·Granted Aug 25, 2015·0 cites·13 claims
- 3651US2024363748A1Semiconductor devices with selectively doped gate electrode structureTEXAS INSTRUMENTS INC·Filed 2023·Application pending·0 cites
- 3750US10861943B2Transistor with multiple GaN-based alloy layersTEXAS INSTRUMENTS INC·Filed 2018·Granted Dec 8, 2020·0 cites·17 claims
- 3850US9184163B1Low cost transistorsTEXAS INSTRUMENTS INC·Filed 2015·Granted Nov 10, 2015·0 cites·7 claims
- 3950US7122862B2Reduction of channel hot carrier effects in transistor devicesTEXAS INSTRUMENTS INC·Filed 2005·Granted Oct 17, 2006·0 cites·6 claims
- 4049US7307309B2EEPROM with etched tunneling windowTEXAS INSTRUMENTS INC·Filed 2004·Granted Dec 11, 2007·4 cites·22 claims
- 4149US7164160B2Integrated circuit device with a vertical JFETTEXAS INSTRUMENTS INC·Filed 2003·Granted Jan 16, 2007·3 cites·10 claims
- 4247US8134212B2Implanted well breakdown in high voltage devicesHAO PINGHAI·Filed 2009·Granted Mar 13, 2012·0 cites·20 claims
- 4347US7135373B2Reduction of channel hot carrier effects in transistor devicesTEXAS INSTRUMENTS INC·Filed 2003·Granted Nov 14, 2006·1 cites·22 claims
- 4447US6885054B1Threshold voltage stabilizer, method of manufacturing and integrated circuit employing the sameTEXAS INSTRUMENTS INC·Filed 2004·Granted Apr 26, 2005·2 cites·25 claims
- 4544US8399924B2High voltage transistor using diluted drainHAO PINGHAI·Filed 2011·Granted Mar 19, 2013·0 cites·10 claims
- 4643US7045418B2Semiconductor device including a dielectric layer having a gettering material located therein and a method of manufacture thereforTEXAS INSTRUMENTS INC·Filed 2003·Granted May 16, 2006·2 cites·22 claims
- 4742US8933510B2DEMOS formed with a through gate implantTEXAS INSTRUMENTS INC·Filed 2013·Granted Jan 13, 2015·0 cites·20 claims
- 4842US2010264466A1Gate self-aligned low noise jfetTEXAS INSTRUMENTS INC·Filed 2010·Application pending·0 cites
- 4940US8110857B2Low noise JFETHAO PINGHAI·Filed 2010·Granted Feb 7, 2012·0 cites·19 claims
- 5039US8946805B2Reduced area single poly EEPROMMITROS JOZEF C·Filed 2009·Granted Feb 3, 2015·0 cites·20 claims
Showing the top 50 of 51 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →