Inventor · disambiguated record
Pili Huang
Also filed as: HUANG PILI
4 granted patents·2 pending applications·8 citations·filing 2019–2023
67Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD6
Top patents by PatentIndex Score
6 records- 0194US10985316B2Bottom electrode structure in memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 20, 2021·6 cites·20 claims
- 0280US10879391B2Wakeup-free ferroelectric memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 29, 2020·2 cites·20 claims
- 0374US2023255124A1Bottom electrode structure in memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 0471US11631810B2Bottom electrode structure in memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 18, 2023·0 cites·20 claims
- 0569US2023197847A1Wakeup-free ferroelectric memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 0665US11594632B2Wakeup-free ferroelectric memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 28, 2023·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →