Inventor · disambiguated record
Pierre Morin
Also filed as: MORIN PIERRE · MORIN PIERRE EDOUARD
78 granted patents·5 pending applications·227 citations·filing 2001–2024
99Inventor score
Files withST MICROELECTRONICS INC48ST MICROELECTRONICS CROLLES 2 SAS8COMMISSARIAT ENERGIE ATOMIQUE5ST MICROELECTRONICS SA5BELL SEMICONDUCTOR LLC3
Top patents by PatentIndex Score
83 records- 0197US8952420B1Method to induce strain in 3-D microfabricated structuresST MICROELECTRONICS INC·Filed 2013·Granted Feb 10, 2015·19 cites·12 claims
- 0295US9607901B2Integrated tensile strained silicon NFET and compressive strained silicon-germanium PFET implemented in FINFET technologyST MICROELECTRONICS INC·Filed 2015·Granted Mar 28, 2017·12 cites·23 claims
- 0395US9466718B2Semiconductor device with fin and related methodsST MICROELECTRONICS INC·Filed 2015·Granted Oct 11, 2016·8 cites·17 claims
- 0494US9287130B1Method for single fin cuts using selective ion implantsGLOBALFOUNDRIES INC·Filed 2015·Granted Mar 15, 2016·12 cites·23 claims
- 0593US11587928B2Method to induce strain in finFET channels from an adjacent regionBELL SEMICONDUCTOR LLC·Filed 2020·Granted Feb 21, 2023·2 cites·14 claims
- 0693US9245953B2Method to induce strain in 3-D microfabricated structuresST MICROELECTRONICS INC·Filed 2015·Granted Jan 26, 2016·6 cites·32 claims
- 0792US10515965B2Method to induce strain in finFET channels from an adjacent regionST MICROELECTRONICS INC·Filed 2018·Granted Dec 24, 2019·4 cites·20 claims
- 0892US10483393B2Method to induce strain in 3-D microfabricated structuresST MICROELECTRONICS INC·Filed 2017·Granted Nov 19, 2019·4 cites·21 claims
- 0992US9679899B2Co-integration of tensile silicon and compressive silicon germaniumST MICROELECTRONICS INC·Filed 2015·Granted Jun 13, 2017·5 cites·20 claims
- 1092US9406783B2Method to induce strain in finFET channels from an adjacent regionST MICROELECTRONICS INC·Filed 2015·Granted Aug 2, 2016·5 cites·35 claims
- 1192US9252208B1Uniaxially-strained FD-SOI finFETST MICROELECTRONICS INC·Filed 2014·Granted Feb 2, 2016·10 cites·20 claims
- 1292US9236474B2Method to form strained channel in thin box SOI structures by elastic strain relaxation of the substrateST MICROELECTRONICS INC·Filed 2014·Granted Jan 12, 2016·10 cites·11 claims
- 1392US9000498B2FinFET with multiple concentration percentagesST MICROELECTRONICS INC·Filed 2013·Granted Apr 7, 2015·12 cites·21 claims
- 1491US10177255B2Semiconductor device with fin and related methodsST MICROELECTRONICS INC·Filed 2017·Granted Jan 8, 2019·4 cites·20 claims
- 1591US10043805B2Method to induce strain in finFET channels from an adjacent regionST MICROELECTRONICS INC·Filed 2016·Granted Aug 7, 2018·4 cites·16 claims
- 1691US9548361B1Method of using a sacrificial gate structure to make a metal gate FinFET transistorST MICROELECTRONICS INC·Filed 2015·Granted Jan 17, 2017·6 cites·20 claims
- 1791US2025126850A1Strained-channel fin fetsST MICROELECTRONICS INC·Filed 2024·Application pending·0 cites
- 1890US9806196B2Semiconductor device with fin and related methodsST MICROELECTRONICS INC·Filed 2016·Granted Oct 31, 2017·4 cites·24 claims
- 1989US12191309B2Method to induce strain in finFET channels from an adjacent regionBELL SEMICONDUCTOR LLC·Filed 2024·Granted Jan 7, 2025·0 cites·22 claims
- 2089US10505043B2Semiconductor device with fin and related methodsST MICROELECTRONICS INC·Filed 2018·Granted Dec 10, 2019·3 cites·15 claims
- 2189US9099559B2Method to induce strain in finFET channels from an adjacent regionST MICROELECTRONICS INC·Filed 2013·Granted Aug 4, 2015·6 cites·12 claims
- 2288US11653582B2Chip containing an onboard non-volatile memory comprising a phase-change materialST MICROELECTRONICS CROLLES 2 SAS·Filed 2018·Granted May 16, 2023·4 cites·19 claims
- 2388US10854606B2Method to induce strain in finFET channels from an adjacent regionST MICROELECTRONICS INC·Filed 2019·Granted Dec 1, 2020·2 cites·20 claims
- 2488US10847654B2Method to induce strain in 3-D microfabricated structuresST MICROELECTRONICS INC·Filed 2019·Granted Nov 24, 2020·2 cites·20 claims
- 2586US10418488B2Method to form strained channel in thin box SOI structures by elastic strain relaxation of the substrateST MICROELECTRONICS INC·Filed 2017·Granted Sep 17, 2019·3 cites·24 claims
- 2686US9431538B2Enhanced method of introducing a stress in a transistor channel by means of sacrificial sources/drain regions and gate replacementCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2015·Granted Aug 30, 2016·5 cites·18 claims
- 2785US9647086B2Early PTS with buffer for channel doping controlGLOBALFOUNDRIES INC·Filed 2015·Granted May 9, 2017·5 cites·20 claims
- 2884US12211936B2Strained-channel fin FETsST MICROELECTRONICS INC·Filed 2022·Granted Jan 28, 2025·0 cites·18 claims
- 2984US9831342B2Method to induce strain in 3-D microfabricated structuresST MICROELECTRONICS INC·Filed 2015·Granted Nov 28, 2017·2 cites·20 claims
- 3083US11948943B2Method to induce strain in FINFET channels from an adjacent regionBELL SEMICONDUCTOR LLC·Filed 2023·Granted Apr 2, 2024·0 cites·26 claims
- 3183US9219133B2Method of making a semiconductor device using spacers for source/drain confinementST MICROELECTRONICS INC·Filed 2013·Granted Dec 22, 2015·4 cites·8 claims
- 3282US9660081B2Method to form localized relaxed substrate by using condensationST MICROELECTRONICS INC·Filed 2016·Granted May 23, 2017·2 cites·22 claims
- 3381US9166049B2Method to enhance strain in fully isolated finFET structuresST MICROELECTRONICS INC·Filed 2014·Granted Oct 20, 2015·5 cites·23 claims
- 3479US10354927B2Co-integration of tensile silicon and compressive silicon germaniumST MICROELECTRONICS INC·Filed 2018·Granted Jul 16, 2019·1 cites·25 claims
- 3576US11569384B2Method to induce strain in 3-D microfabricated structuresST MICROELECTRONICS INC·Filed 2020·Granted Jan 31, 2023·0 cites·22 claims
- 3676US10600786B2Method for fabricating a device with a tensile-strained NMOS transistor and a uniaxial compression strained PMOS transistorCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2017·Granted Mar 24, 2020·2 cites·8 claims
- 3776US9859426B1Semiconductor device including optimized elastic strain bufferIBM·Filed 2016·Granted Jan 2, 2018·2 cites·16 claims
- 3875US9224845B1Silicon carbide static induction transistor and process for making a silicon carbide static induction transistorST MICROELECTRONICS INC·Filed 2014·Granted Dec 29, 2015·2 cites·26 claims
- 3974US11302812B2Semiconductor device with fin and related methodsST MICROELECTRONICS INC·Filed 2020·Granted Apr 12, 2022·0 cites·20 claims
- 4074US10068908B2Method to form localized relaxed substrate by using condensationST MICROELECTRONICS INC·Filed 2017·Granted Sep 4, 2018·1 cites·21 claims
- 4174US10032912B2Semiconductor integrated structure having an epitaxial SiGe layer extending from silicon-containing regions formed between segments of oxide regionsST MICROELECTRONICS INC·Filed 2014·Granted Jul 24, 2018·2 cites·19 claims
- 4273US10903423B2Phase change memoryST MICROELECTRONICS CROLLES 2 SAS·Filed 2019·Granted Jan 26, 2021·1 cites·22 claims
- 4372US10510955B2Phase change memoryST MICROELECTRONICS CROLLES 2 SAS·Filed 2018·Granted Dec 17, 2019·1 cites·10 claims
- 4472US9917194B2Self-aligned silicon germanium FinFET with relaxed channel regionST MICROELECTRONICS INC·Filed 2016·Granted Mar 13, 2018·1 cites·20 claims
- 4571US9620626B2Method for fabricating a semiconductor device including fin relaxation, and related structuresSOITEC SILICON ON INSULATOR·Filed 2014·Granted Apr 11, 2017·2 cites·21 claims
- 4670US9318372B2Method of stressing a semiconductor layerST MICROELECTRONICS SA·Filed 2014·Granted Apr 19, 2016·2 cites·26 claims
- 4770US7187038B2Semiconductor device with MOS transistors with an etch-stop layer having an improved residual stress level and method for fabricating such a semiconductor deviceST MICROELECTRONICS SA·Filed 2003·Granted Mar 6, 2007·17 cites·11 claims
- 4869US12232435B2Chip containing an onboard non-volatile memory comprising a phase-change materialST MICROELECTRONICS CROLLES 2 SAS·Filed 2023·Granted Feb 18, 2025·0 cites·17 claims
- 4969US10854750B2Semiconductor device with fin and related methodsST MICROELECTRONICS INC·Filed 2019·Granted Dec 1, 2020·0 cites·20 claims
- 5069US10403682B2Phase-change memoryST MICROELECTRONICS CROLLES 2 SAS·Filed 2018·Granted Sep 3, 2019·1 cites·12 claims
Showing the top 50 of 83 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →