Inventor · disambiguated record
Pin Chun Shen
Also filed as: Shen pin-chun
3 granted patents·9 pending applications·2 citations·filing 2013–2025
50Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD6MITSUBISHI ELECTRIC RES LABORATORIES INC2UNIV NAT TAIWAN2INFORMATION TECH INC1MASSACHUSETTS INST TECHNOLOGY1
Top patents by PatentIndex Score
12 records- 0178US2025359275A1Gate-all-around transistor having multiple gate lengthsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0275US10833102B2Low power 2D memory transistor for flexible electronics and the fabrication methods thereofMITSUBISHI ELECTRIC RES LABORATORIES INC·Filed 2019·Granted Nov 10, 2020·2 cites·28 claims
- 0370US2025234623A1Gate-all-around transistor having multiple gate lengthsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0453US2024322024A1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 0549US11935938B2Devices and methods for creating ohmic contacts using bismuthMASSACHUSETTS INST TECHNOLOGY·Filed 2021·Granted Mar 19, 2024·0 cites·8 claims
- 0649US2024162308A1Semiconductor device and method for manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 0747US2024128267A1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 0845US2023307523A1Structure and formation method of semiconductor device with gate stackTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 0944US2015036316A1White light-emitting diode with high uniformity and wide angle intensity distributionUNIV NAT TAIWAN·Filed 2013·Application pending·0 cites
- 1043US2014302253A1Method for fabricating metal-ion-doped zinc sulfide nanoparticle and method for generating a warm white light by using the metal-ion-doped zinc sulfide nanoparticleUNIV NAT TAIWAN·Filed 2013·Application pending·0 cites
- 1142US10892728B2Virtual inductors using ferroelectric capacitance and the fabrication method thereofMITSUBISHI ELECTRIC RES LABORATORIES INC·Filed 2018·Granted Jan 12, 2021·0 cites·15 claims
- 1235US2016230087A1METHOD FOR FABRICATING PHOSPHOR HAVING MAXIMUM ABSORPTION WAVELENGTH BETWEEN 410 nm AND 470 nm AND HAVING NO RARE EARTH ELEMENT THEREIN AND METHOD FOR GENERATING A WHITE LIGHT BY USING THE PHOSPHORINFORMATION TECH INC·Filed 2015·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →