Inventor · disambiguated record
Po-Nien Chen
Also filed as: CHEN PO-NIEN
43 granted patents·14 pending applications·62 citations·filing 2006–2025
97Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD34TAIWAN SEMICONDUCTOR MFG7ASUSTEK COMP INC6CHEN PO-NIEN2ADVANCED SEMICONDUCTOR ENG1
Top patents by PatentIndex Score
57 records- 0194US11056396B1Gate-all-around devices having gate dielectric layers of varying thicknesses and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 6, 2021·9 cites·20 claims
- 0290US8846510B2Method and structure to boost MOSFET performance and NBTITAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Sep 30, 2014·10 cites·20 claims
- 0388US11880234B2Electronic deviceASUSTEK COMP INC·Filed 2022·Granted Jan 23, 2024·3 cites·10 claims
- 0487US9865510B2Device and methods for high-K and metal gate slacksTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 9, 2018·4 cites·20 claims
- 0585US11775028B2Foldable electronic deviceASUSTEK COMP INC·Filed 2022·Granted Oct 3, 2023·1 cites·10 claims
- 0684US2024321731A1Semiconductor device and a method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0782US10411085B2Semiconductor device and a method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Sep 10, 2019·2 cites·19 claims
- 0881US10861928B2Integrated circuits with capacitorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 8, 2020·2 cites·20 claims
- 0981US9219125B2Device and methods for high-k and metal gate stacksTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Dec 22, 2015·4 cites·20 claims
- 1079US12243871B2Integrated circuits with capacitorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 4, 2025·0 cites·20 claims
- 1179US9048335B2Method of fabricating multiple gate stack compositionsTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jun 2, 2015·4 cites·7 claims
- 1278US9679817B2Semiconductor structures and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jun 13, 2017·2 cites·20 claims
- 1378US8698252B2Device for high-K and metal gate stacksCHEN PO-NIEN·Filed 2012·Granted Apr 15, 2014·5 cites·20 claims
- 1478US2024395628A1Gate-all-around devices having gate dielectric layers of varying thicknesses and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1575US12057469B2Semiconductor device and a method of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 6, 2024·0 cites·20 claims
- 1675US10312334B2Hybrid doping profileTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jun 4, 2019·2 cites·17 claims
- 1774US10147835B2Optical device and method of manufacturing the sameADVANCED SEMICONDUCTOR ENG·Filed 2017·Granted Dec 4, 2018·2 cites·21 claims
- 1874US9093559B2Method of hybrid high-k/metal-gate stack fabricationNG JIN-AUN·Filed 2012·Granted Jul 28, 2015·4 cites·20 claims
- 1973US10170414B2Semiconductor device and a method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jan 1, 2019·1 cites·20 claims
- 2073US9000533B2Device and methods for high-K and metal gate stacksWU WEI CHENG·Filed 2012·Granted Apr 7, 2015·3 cites·8 claims
- 2173US2025169163A1Integrated circuits with capacitorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2272US12033937B2Semiconductor device and a method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 9, 2024·0 cites·20 claims
- 2372US11024703B2Semiconductor device and a method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 1, 2021·0 cites·20 claims
- 2471US11587790B2Integrated circuits with capacitorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 21, 2023·0 cites·20 claims
- 2569US9773731B2Semiconductor device and a method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Sep 26, 2017·1 cites·20 claims
- 2668US12255105B2Gate-all-around devices having gate dielectric layers of varying thicknesses and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 18, 2025·0 cites·20 claims
- 2768US9831235B2Method of making structure having a gate stackTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Nov 28, 2017·1 cites·20 claims
- 2867US9576855B2Device and methods for high-k and metal gate stacksTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Feb 21, 2017·1 cites·19 claims
- 2966US10700160B2Semiconductor device and a method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 30, 2020·0 cites·20 claims
- 3064US9059022B2Semiconductor structures and methods of forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jun 16, 2015·1 cites·19 claims
- 3162US2024355868A1Semiconductor device and a method of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3261US10840181B2Semiconductor device and a method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 17, 2020·0 cites·20 claims
- 3359US11942375B2Structure and formation method of semiconductor device with fin structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 26, 2024·0 cites·20 claims
- 3459US2025351304A1External electronic deviceASUSTEK COMP INC·Filed 2024·Application pending·0 cites
- 3557US10707315B2Hybrid doping profileTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 7, 2020·0 cites·20 claims
- 3657US10276447B2Semiconductor structures and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 30, 2019·0 cites·20 claims
- 3756US2025169106A1Semiconductor structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3855US10418361B2Circuit incorporating multiple gate stack compositionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Sep 17, 2019·0 cites·19 claims
- 3955US9431500B2Integrated circuit device having defined gate spacing and method of designing and fabricating thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Aug 30, 2016·0 cites·20 claims
- 4055US8940596B2Method of making structure having a gate stackTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jan 27, 2015·0 cites·11 claims
- 4155US2024395803A1Semiconductor structure including vertical diode device and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4255US2024105849A1Semiconductor structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4355US2024395802A1Diode-containing component and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4454US11094597B2Structure and formation method of semiconductor device with fin structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 17, 2021·0 cites·20 claims
- 4554US2024105521A1Semiconductor device structure with isolation layer and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4652US9378961B2Methods of fabricating multiple gate stack compositionsTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted Jun 28, 2016·0 cites·20 claims
- 4751US8587074B2Device having a gate stackCHUANG HARRY-HAK-LAY·Filed 2011·Granted Nov 19, 2013·0 cites·23 claims
- 4848US11625111B2Control method for electronic deviceASUSTEK COMP INC·Filed 2022·Granted Apr 11, 2023·0 cites·9 claims
- 4948US8635573B2Method of fabricating a semiconductor device having a defined minimum gate spacing between adjacent gate structuresCHUANG HAK-LAY·Filed 2011·Granted Jan 21, 2014·0 cites·18 claims
- 5048US2010301633A1Vehicular Rear SpoilerCHEN PO-NIEN·Filed 2009·Application pending·0 cites
Showing the top 50 of 57 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →