Inventor · disambiguated record
Po-Hsien Cheng
Also filed as: CHENG PO-HSIEN
17 granted patents·21 pending applications·12 citations·filing 2016–2025
89Inventor score
Top patents by PatentIndex Score
38 records- 0197US11271083B2Semiconductor device, FinFET device and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 8, 2022·6 cites·20 claims
- 0290US12110587B2Deposition apparatus and method with EM radiationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 8, 2024·1 cites·19 claims
- 0388US11114564B2Ferroelectric MFM inductor and related circuitsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 7, 2021·3 cites·20 claims
- 0484US12324185B2Semiconductor device, FinFET device and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jun 3, 2025·0 cites·20 claims
- 0584US2025087482A1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0684US2023383403A1Deposition Apparatus and Method with EM RadiationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 0783US2025267890A1Semiconductor device, finfet device and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0883US2024384409A1Deposition apparatus and method with em radiationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0982US2024395933A1Ferroelectric mfm inductor and related circuitsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1081US12349419B2Ferroelectric MFM inductor and related circuitsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 1, 2025·0 cites·20 claims
- 1181US12033850B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 9, 2024·0 cites·20 claims
- 1280US2025359113A1Method of manufacturing semiconductor devices and semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1379US12191144B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 7, 2025·0 cites·20 claims
- 1479US2025343051A1Method for forming a semiconductor device having a gate mask composing of a semiconductor layer over a dielectric layer formed on gate electrodeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1579US2025349718A1Semiconductor Devices Including Backside Power Via and Methods of Forming the SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1679US2024395612A1Carbon-based liner to reduce contact resistanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1778US2025331288A1Semiconductor device and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1877US9773662B1Method for fabricating a fine structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Sep 26, 2017·2 cites·20 claims
- 1977US2025331276A1Isolation layers for reducing leakages between contactsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2077US2025329634A1Semiconductor device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2175US11984485B2Semiconductor device, FinFET device and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 14, 2024·0 cites·20 claims
- 2274US12512408B2Semiconductor devices including backside power via and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 30, 2025·0 cites·20 claims
- 2374US2023402321A1Carbon-based liner to reduce contact resistanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2473US11728426B2Ferroelectric MFM inductor and related circuitsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 15, 2023·0 cites·20 claims
- 2571US12426348B2Semiconductor device and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 23, 2025·0 cites·20 claims
- 2670US11508572B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 22, 2022·0 cites·20 claims
- 2769US12439624B2Method of manufacturing semiconductor devices including forming an air gap based on removing a recessed sacrificial layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 7, 2025·0 cites·20 claims
- 2866US12374616B2Semiconductor device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 29, 2025·0 cites·20 claims
- 2966US2023317469A1Semiconductor Device and Methods of Forming the SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 3066US2022352018A1Carbon-based liner to reduce contact resistanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Application pending·0 cites
- 3164US2023154992A1Isolation Layers for Reducing Leakages Between ContactsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 3261US2025366082A1Semiconductor structure with reduced body leakage current and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3359US2025291927A1Electronic device, method for protecting electronic device, and non-transitory computer readable storage mediumGETAC TECHNOLOGY CORP·Filed 2024·Application pending·0 cites
- 3459US2025234607A1Semiconductor structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3556US11441221B2Method of performing atomic layer depositionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 13, 2022·0 cites·20 claims
- 3656US2025087529A1Method for filling gapTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3752US2023274977A1Self-Aligned Interconnect Structures and Methods of Forming the SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 3845US10269982B2Metallic channel device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Apr 23, 2019·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →