Inventor · disambiguated record
Po-Tao Chu
Also filed as: CHU PO-TAO
45 granted patents·2 pending applications·289 citations·filing 1995–2025
97Inventor score
Top patents by PatentIndex Score
47 records- 0196US12002774B2Passivation scheme for pad openings and trenchesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 4, 2024·2 cites·20 claims
- 0296US11444046B2Passivation scheme for pad openings and trenchesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 13, 2022·3 cites·20 claims
- 0395US11374107B2Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 28, 2022·3 cites·19 claims
- 0494US10312207B2Passivation scheme for pad openings and trenchesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 4, 2019·7 cites·20 claims
- 0594US9941384B2Semiconductor device and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Apr 10, 2018·8 cites·20 claims
- 0692US10163707B2Method for forming group III-V device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 25, 2018·10 cites·20 claims
- 0791US2025343181A1Passivation scheme for pad openings and trenchesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0888US12424573B2Passivation scheme for pad openings and trenchesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Sep 23, 2025·0 cites·20 claims
- 0988US10804231B2Passivation scheme for pad openings and trenchesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 13, 2020·3 cites·20 claims
- 1083US6006764AMethod of stripping photoresist from Al bonding pads that prevents corrosionTAIWAN SEMICONDUCTOR MFG·Filed 1997·Granted Dec 28, 1999·73 cites·17 claims
- 1182US5746928AProcess for cleaning an electrostatic chuck of a plasma etching apparatusTAIWAN SEMICONDUCTOR MFG·Filed 1996·Granted May 5, 1998·75 cites·7 claims
- 1279US12027603B2Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 2, 2024·0 cites·20 claims
- 1379US9882046B2Ultra high voltage semiconductor device with electrostatic discharge capabilitiesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jan 30, 2018·2 cites·19 claims
- 1478US9312348B2Ultra high voltage semiconductor device with electrostatic discharge capabilitiesTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Apr 12, 2016·3 cites·20 claims
- 1575US11901433B2Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 13, 2024·0 cites·20 claims
- 1675US9166046B2Semiconductor device and method of manufacturingTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Oct 20, 2015·3 cites·20 claims
- 1771US8779555B2Partial SOI on power device for breakdown voltage improvementTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Jul 15, 2014·2 cites·9 claims
- 1870US11233121B2Method of making bipolar transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 25, 2022·0 cites·20 claims
- 1970US9666511B2Isolation method for a stand alone high voltage laterally-diffused metal-oxide semiconductor (LDMOS) transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted May 30, 2017·2 cites·18 claims
- 2069US9608060B2Isolation structure for semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Mar 28, 2017·2 cites·18 claims
- 2167US9647065B2Bipolar transistor structure having split collector region and method of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted May 9, 2017·1 cites·20 claims
- 2265US11114543B2Group III-V device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Sep 7, 2021·1 cites·19 claims
- 2365US10840371B2Ultra high voltage semiconductor device with electrostatic discharge capabilitiesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 17, 2020·0 cites·20 claims
- 2464US11183407B2Adaptive inset for wafer cassette systemTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 23, 2021·0 cites·20 claims
- 2563US11189510B2Adaptive inset for wafer cassette systemTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 30, 2021·0 cites·20 claims
- 2663US10686054B2Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 16, 2020·0 cites·20 claims
- 2762US10134867B2Method for fabricating semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 20, 2018·0 cites·20 claims
- 2861US6051505APlasma etch method for forming metal-fluoropolymer residue free vias through silicon containing dielectric layersTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Apr 18, 2000·31 cites·15 claims
- 2960US10461183B2Ultra high voltage semiconductor device with electrostatic discharge capabilitiesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Oct 29, 2019·0 cites·20 claims
- 3058US5672543AVolcano defect-free tungsten plugTAIWAN SEMICONDUCTOR MFG·Filed 1996·Granted Sep 30, 1997·29 cites·10 claims
- 3157US10686036B2Method of making bipolar transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jun 16, 2020·0 cites·20 claims
- 3255US10535541B2Adaptive inset for wafer cassette systemTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jan 14, 2020·0 cites·20 claims
- 3351US9748377B2Semiconductor device and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 29, 2017·0 cites·20 claims
- 3451US9093520B2High-voltage super junction by trench and epitaxial dopingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Jul 28, 2015·0 cites·12 claims
- 3550US10002761B2Method for forming a multiple layer epitaxial layer on a waferTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jun 19, 2018·0 cites·20 claims
- 3648US9558986B2Semiconductor structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Jan 31, 2017·0 cites·14 claims
- 3747US6743735B2Photoresist removal from alignment marks through wafer edge exposureTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Jun 1, 2004·4 cites·16 claims
- 3846US9614031B2Methods for forming a high-voltage super junction by trench and epitaxial dopingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Apr 4, 2017·0 cites·20 claims
- 3944US9564515B2Semiconductor device having super junction structure and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Feb 7, 2017·0 cites·19 claims
- 4043US5554563AIn situ hot bake treatment that prevents precipitate formation after a contact layer etch back stepTAIWAN SEMICONDUCTOR MFG·Filed 1995·Granted Sep 10, 1996·11 cites·23 claims
- 4142US9698256B2Termination of super junction power MOSFETTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jul 4, 2017·0 cites·19 claims
- 4241US9985094B2Super junction with an angled trench, transistor having the super junction and method of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted May 29, 2018·0 cites·20 claims
- 4341US9184282B2Ultra-high voltage laterally-diffused MOS devices and methods of forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Nov 10, 2015·0 cites·20 claims
- 4441US8975153B2Super junction trench metal oxide semiconductor device and method of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Mar 10, 2015·0 cites·19 claims
- 4540US6077776APolysilicon residue free process by thermal treatmentTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Jun 20, 2000·9 cites·19 claims
- 4637US2018337228A1Novel seal ring for iii-v compound semiconductor-based devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Application pending·0 cites
- 4728US5604134AParticle monitoring method for plasma reactors with moving gas distribution housingsTAIWAN SEMICONDUCTOR MFG·Filed 1996·Granted Feb 18, 1997·5 cites·14 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →