Inventor · disambiguated record
Po-Kang Ho
Also filed as: HO PO-KANG
4 granted patents·13 pending applications·7 citations·filing 2016–2025
66Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD17
Top patents by PatentIndex Score
17 records- 0185US11302535B2Performing annealing process to improve fin quality of a FinFET semiconductorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 12, 2022·4 cites·20 claims
- 0284US2025351564A1Transistor isolation regions and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0381US2025366126A1Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0477US9893185B2Fin field effect transistor and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Feb 13, 2018·3 cites·17 claims
- 0577US2025351510A1Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0676US2024379381A1Performing annealing process to improve fin quality of a finfet semiconductorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0774US2024096897A1Transistor isolation regions and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 0873US2024266229A1Semiconductor structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0972US2025081572A1Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1070US12142490B2Performing annealing process to improve Fin quality of a FinFET semiconductorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 12, 2024·0 cites·17 claims
- 1170US11978676B2Semiconductor structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 7, 2024·0 cites·20 claims
- 1267US2022359517A1Transistor Isolation Regions and Methods of Forming the SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Application pending·0 cites
- 1364US2023008413A1Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 1458US2025254906A1Semiconductor device and method of forming thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1557US2025126859A1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1657US2025374611A1Protective hard mask and methods of making sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1751US2023260804A1Manufacturing method for forming semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Po-Kang Ho files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →