Inventor · disambiguated record
Po-Hsien Li
Also filed as: LI PO · LI PO-HSIEN
13 granted patents·1 pending application·50 citations·filing 2010–2023
87Inventor score
Files withSINOPOWER SEMICONDUCTOR INC8LEADPOWER SEMI CO LTD4LIN WEI-CHIEH1SHANGHAI HUAHONG GRACE SEMICONDUCTOR MFG CORP1
Top patents by PatentIndex Score
14 records- 0195US9799743B1Trenched power semiconductor elementSINOPOWER SEMICONDUCTOR INC·Filed 2016·Granted Oct 24, 2017·28 cites·15 claims
- 0283US9722071B1Trench power transistorSINOPOWER SEMICONDUCTOR INC·Filed 2016·Granted Aug 1, 2017·5 cites·11 claims
- 0379US10749006B2Trench power transistor and method of producing the sameLEADPOWER-SEMI CO LTD·Filed 2019·Granted Aug 18, 2020·3 cites·17 claims
- 0477US10128368B2Double gate trench power transistor and manufacturing method thereofSINOPOWER SEMICONDUCTOR INC·Filed 2016·Granted Nov 13, 2018·3 cites·8 claims
- 0573US9991378B2Trench power semiconductor deviceSINOPOWER SEMICONDUCTOR INC·Filed 2016·Granted Jun 5, 2018·2 cites·19 claims
- 0672US8319284B2Laterally diffused metal-oxide-semiconductor deviceLIN WEI-CHIEH·Filed 2010·Granted Nov 27, 2012·4 cites·20 claims
- 0766US9368621B1Power semiconductor device having low on-state resistanceSINOPOWER SEMICONDUCTOR INC·Filed 2014·Granted Jun 14, 2016·2 cites·9 claims
- 0863US8860134B1Trench power device and manufacturing method thereofSINOPOWER SEMICONDUCTOR INC·Filed 2013·Granted Oct 14, 2014·2 cites·7 claims
- 0958US8963235B1Trench power device and semiconductor structure thereofSINOPOWER SEMICONDUCTOR INC·Filed 2013·Granted Feb 24, 2015·1 cites·10 claims
- 1055US12287364B2Test system and test deviceLEADPOWER SEMI CO LTD·Filed 2023·Granted Apr 29, 2025·0 cites·11 claims
- 1145US12356678B2Trench-gate transistor deviceLEADPOWER SEMI CO LTD·Filed 2022·Granted Jul 8, 2025·0 cites·11 claims
- 1240US11069794B2Trench power transistor and method of producing the sameLEADPOWER SEMI CO LTD·Filed 2019·Granted Jul 20, 2021·0 cites·6 claims
- 1335US9318545B2Resistor structure and method for forming the sameSHANGHAI HUAHONG GRACE SEMICONDUCTOR MFG CORP·Filed 2014·Granted Apr 19, 2016·0 cites·10 claims
- 1435US2013001699A1Trench junction barrier schottky structure with enhanced contact area integrated with a mosfetSINOPOWER SEMICONDUCTOR INC·Filed 2011·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →