Inventor · disambiguated record
Po-Shao Lin
Also filed as: LIN PO SHAO
5 granted patents·6 pending applications·4 citations·filing 2021–2025
68Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD11
Top patents by PatentIndex Score
11 records- 0195US11901410B2Semiconductor devices and methods of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 13, 2024·3 cites·20 claims
- 0288US12363988B2Inner spacer features for multi-gate transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 15, 2025·1 cites·20 claims
- 0380US12317556B2Semiconductor devices and methods of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted May 27, 2025·0 cites·20 claims
- 0479US2025359215A1Transition between different active regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0577US2025261416A1Semiconductor devices and methods of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0676US2025338590A1Inner spacer for a multi-gate device and related methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0775US2025318246A1Inner Spacer Features For Multi-Gate TransistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0873US2024395893A1Semiconductor device and forming method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0965US12080775B2Semiconductor device and forming method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 3, 2024·0 cites·20 claims
- 1064US2024120376A1Transition between different active regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1158US12376339B2Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 29, 2025·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →