Inventor · disambiguated record
Po-Chun Liu
Also filed as: LIU PO-CHUN
84 granted patents·26 pending applications·274 citations·filing 2003–2025
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD58TAIWAN SEMICONDUCTOR MFG18LIU PO-CHUN7CHEN CHI-MING5IND TECH RES INST5
Top patents by PatentIndex Score
110 records- 0197US10861896B2Capping structure to reduce dark current in image sensorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 8, 2020·7 cites·20 claims
- 0296US8866192B1Semiconductor device, high electron mobility transistor (HEMT) and method of manufacturingTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Oct 21, 2014·29 cites·20 claims
- 0396US8803158B1High electron mobility transistor and method of forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Aug 12, 2014·24 cites·20 claims
- 0495US11923237B2Manufacturing method of semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 5, 2024·2 cites·20 claims
- 0595US11393866B2Method for forming an image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 19, 2022·3 cites·20 claims
- 0693US9142407B2Semiconductor structure having sets of III-V compound layers and method of forming the sameCHEN CHI-MING·Filed 2013·Granted Sep 22, 2015·9 cites·20 claims
- 0792US9660063B2Semiconductor structure having sets of III-V compound layers and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted May 23, 2017·5 cites·20 claims
- 0892US9368610B2High electron mobility transistor with indium nitride layerTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted Jun 14, 2016·6 cites·20 claims
- 0992US8912570B2High electron mobility transistor and method of forming the sameCHIANG CHEN-HAO·Filed 2012·Granted Dec 16, 2014·21 cites·18 claims
- 1091US9233844B2Graded aluminum—gallium—nitride and superlattice buffer layer for III-V nitride layer on silicon substrateCHEN CHI-MING·Filed 2012·Granted Jan 12, 2016·12 cites·20 claims
- 1190US9245991B2Semiconductor device, high electron mobility transistor (HEMT) and method of manufacturingTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jan 26, 2016·8 cites·20 claims
- 1290US8895992B2High electron mobility transistor and method of forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Nov 25, 2014·8 cites·19 claims
- 1389US9525054B2High electron mobility transistor and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Dec 20, 2016·8 cites·20 claims
- 1489US8901609B1Transistor having doped substrate and method of making the sameTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Dec 2, 2014·12 cites·20 claims
- 1588US2025344524A1Doped semiconductor structure for nir sensorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1687US11594413B2Semiconductor structure having sets of III-V compound layers and method of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 28, 2023·1 cites·20 claims
- 1787US2024379724A1Capping structure to reduce dark current in image sensorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1886US8969882B1Transistor having an ohmic contact by screen layer and method of making the sameTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Mar 3, 2015·6 cites·20 claims
- 1986US2024363777A1Dielectric sidewall structure for quality improvement in ge and sige devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2085US12272716B2Capping structure to reduce dark current in image sensorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 8, 2025·0 cites·20 claims
- 2185US11329148B2Semiconductor device having doped seed layer and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 10, 2022·2 cites·20 claims
- 2284US11551927B2High electron mobility transistor (HEMT) having an indium-containing layer and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 10, 2023·1 cites·20 claims
- 2384US7772595B2Nitride semiconductor substrate, method for forming a nitride semiconductor layer and method for separating the nitride semiconductor layer from the substrateIND TECH RES INST·Filed 2006·Granted Aug 10, 2010·7 cites·4 claims
- 2483US12334389B2Manufacturing method of semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jun 17, 2025·0 cites·20 claims
- 2583US12094989B2Dielectric sidewall structure for quality improvement in Ge and SiGe devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 17, 2024·0 cites·20 claims
- 2683US9236464B2Method of forming a high electron mobility transistorTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Jan 12, 2016·5 cites·20 claims
- 2783US9076854B2Semiconductor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jul 7, 2015·4 cites·20 claims
- 2883US8975641B1Transistor having an ohmic contact by gradient layer and method of making the sameTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Mar 10, 2015·6 cites·20 claims
- 2982US12369413B2Method for forming an image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 22, 2025·0 cites·20 claims
- 3082US12363969B2Passivation layer for epitaxial semiconductor processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 15, 2025·0 cites·20 claims
- 3182US10147829B2Dielectric sidewall structure for quality improvement in Ge and SiGe devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 4, 2018·2 cites·20 claims
- 3282US2025301807A1Method for forming an image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3382US2025324785A1Sensor device and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3482US2024379726A1Doped semiconductor structure for nir sensorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3581US12278139B2Manufacturing method of semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 15, 2025·0 cites·20 claims
- 3681US9093511B2Transistor having high breakdown voltage and method of making the sameTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jul 28, 2015·4 cites·20 claims
- 3781US2025301736A1Passivation layer for epitaxial semiconductor processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3881US2025324786A1Liner layer along absorption structure of ir sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3980US9548376B2Method of manufacturing a semiconductor device including a barrier structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 17, 2017·2 cites·20 claims
- 4080US2024021719A1Semiconductor device having doped seed layer and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4179US9899493B2High electron mobility transistor and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Feb 20, 2018·2 cites·20 claims
- 4279US8772831B2III-nitride growth method on silicon substrateCHEN CHI-MING·Filed 2011·Granted Jul 8, 2014·4 cites·22 claims
- 4378US12308230B2High electron mobility transistor (HEMT) having an indium-containing layer and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 20, 2025·0 cites·20 claims
- 4478US11908900B2Passivation layer for epitaxial semiconductor processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 20, 2024·0 cites·20 claims
- 4577US11784207B2Method for forming an image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 10, 2023·0 cites·20 claims
- 4676US10483386B2Semiconductor device, transistor having doped seed layer and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Nov 19, 2019·2 cites·20 claims
- 4776US8502190B2Device of light-emitting diodeLIU PO-CHUN·Filed 2011·Granted Aug 6, 2013·2 cites·16 claims
- 4875US12389633B2Source/drains in semiconductor devices and methods of forming thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 12, 2025·0 cites·16 claims
- 4975US11417520B2Semiconductor structure having sets of III-V compound layers and method of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 16, 2022·0 cites·20 claims
- 5075USD908851SHand washing stationLEE PIN HSING·Filed 2018·Granted Jan 26, 2021·19 cites·1 claims
Showing the top 50 of 110 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →