Inventor · disambiguated record
Po-Lin Peng
Also filed as: PENG PO-LIN
20 granted patents·6 pending applications·29 citations·filing 2016–2024
92Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD26
Top patents by PatentIndex Score
26 records- 0197US11908859B2Semiconductor device including transistors sharing gates with structures having reduced parasitic circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 20, 2024·2 cites·20 claims
- 0297US11710962B2Device and method for operating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 25, 2023·4 cites·20 claims
- 0395US12051896B2Device and method for operating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 30, 2024·2 cites·20 claims
- 0492US10643988B2Intelligent diode structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 5, 2020·6 cites·20 claims
- 0591US11289472B2Integrated circuit with electrostatic discharge protectionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 29, 2022·2 cites·20 claims
- 0690US11355927B2Device and method for operating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 7, 2022·2 cites·20 claims
- 0788US10411005B2Intelligent diode structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Sep 10, 2019·4 cites·20 claims
- 0887US12396256B2Semiconductor device including transistors sharing gates with structures having reduced parasitic circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Aug 19, 2025·0 cites·20 claims
- 0984US11282831B2Semiconductor device having multiple electrostatic discharge (ESD) pathsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 22, 2022·2 cites·20 claims
- 1084US2024079408A1Semiconductor device including transistors sharing gates with structures having reduced parasitic circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1184US2024222363A1Semiconductor device having multiple electrostatic discharge (esd) pathsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1284US2024178216A1Semiconductor device having multiple electrostatic discharge (esd) pathsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1383US10366992B2Semiconductor device including transistors sharing gatesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jul 30, 2019·2 cites·20 claims
- 1479US2024395801A1Integrated circuit with electrostatic discharge protectionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1578US11961834B2Semiconductor device having multiple electrostatic discharge (ESD) pathsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 16, 2024·0 cites·20 claims
- 1678US11929363B2Semiconductor device having multiple electrostatic discharge (ESD) pathsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 12, 2024·0 cites·20 claims
- 1778US11855088B2Semiconductor device including transistors sharing gates with structures having reduced parasitic circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·0 cites·20 claims
- 1878US10777546B2Planar and non-planar FET-based electrostatic discharge protection devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Sep 15, 2020·2 cites·20 claims
- 1978US2024347531A1Planar and non-planar fet-based electrostatic discharge protection devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2075US2024387512A1Integrated circuit device and method for esd protectionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2172US12094871B2Integrated circuit with electrostatic discharge protectionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 17, 2024·0 cites·20 claims
- 2271US10867987B2Integrated circuit device having ESD protectionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 15, 2020·1 cites·20 claims
- 2369US12051691B2Planar and non-planar FET-based electrostatic discharge protection devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 30, 2024·0 cites·20 claims
- 2469US10930640B2Intelligent diode structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 23, 2021·0 cites·20 claims
- 2566US11222893B2Semiconductor device including transistors sharing gates with structures having reduced parasitic circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jan 11, 2022·0 cites·20 claims
- 2662US12433034B2Integrated circuit device and method for ESD protectionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 30, 2025·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →