Inventor · disambiguated record
Po-Nan Yeh
Also filed as: YEH PO-NAN
12 granted patents·7 pending applications·6 citations·filing 2019–2025
84Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD19
Top patents by PatentIndex Score
19 records- 0188US11488857B2Semiconductor device and method of manufacture using a contact etch stop layer (CESL) breakthrough processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 1, 2022·2 cites·20 claims
- 0283US11488859B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 1, 2022·3 cites·20 claims
- 0383US11276571B2Method of breaking through etch stop layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 15, 2022·1 cites·20 claims
- 0483US2024371688A1Semiconductor device with doped region dielectric layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0582US2025336719A1Semiconductor device with doped region dielectric layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0681US12381081B2Method of breaking through etch stop layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Aug 5, 2025·0 cites·20 claims
- 0778US12136566B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 5, 2024·0 cites·20 claims
- 0878US12051619B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 30, 2024·0 cites·20 claims
- 0977US2025343189A1Multiple polymer layers as the encapsulant of conductive viasTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1075US12272598B2Conductive feature of a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 8, 2025·0 cites·20 claims
- 1175US2025201627A1Conductive feature of a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1274US11901180B2Method of breaking through etch stop layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 13, 2024·0 cites·20 claims
- 1371US2025140724A1Multiple Polymer Layers as the Encapsulant of Conductive ViasTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1470US11996324B2Conductive feature of a semiconductor device and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 28, 2024·0 cites·20 claims
- 1569US12224204B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 11, 2025·0 cites·20 claims
- 1655US2024186257A1Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1753US2022375868A1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 1852US11195752B1Semiconductor device and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 7, 2021·0 cites·20 claims
- 1951US11424185B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 23, 2022·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →