Inventor · disambiguated record
Prabhat Agarwal
Also filed as: AGARWAL PRABHAT
18 granted patents·7 pending applications·265 citations·filing 2004–2009
94Inventor score
Files withNXP BV12KONINKL PHILIPS ELECTRONICS NV5INFINEON TECHNOLOGIES AG2AGARWAL PRABHAT1AKIL NADER1
Top patents by PatentIndex Score
25 records- 0195US7714292B2Geiger mode avalanche photodiodeKONINKL PHILIPS ELECTRONICS NV·Filed 2007·Granted May 11, 2010·90 cites·34 claims
- 0293US8330090B2Photosensitive device and method of manufacturing a photosensitive device using nanowire diodesAGARWAL PRABHAT·Filed 2008·Granted Dec 11, 2012·39 cites·27 claims
- 0391US7667502B2Low voltage differential signalling driver with pre-emphasisINFINEON TECHNOLOGIES AG·Filed 2005·Granted Feb 23, 2010·22 cites·12 claims
- 0489US7759650B2Implementation of avalanche photo diodes in (Bi)CMOS processesKONINKL PHILIPS ELECTRONICS NV·Filed 2007·Granted Jul 20, 2010·12 cites·41 claims
- 0588US8159018B2Non-volatile memory deviceAKIL NADER·Filed 2007·Granted Apr 17, 2012·24 cites·20 claims
- 0685US7839209B2Tunnel field effect transistorNXP BV·Filed 2007·Granted Nov 23, 2010·12 cites·10 claims
- 0785US7791108B2Nanowire tunneling transistorNXP BV·Filed 2007·Granted Sep 7, 2010·21 cites·11 claims
- 0879US7709923B2Metal-base nanowire transistorNXP BV·Filed 2006·Granted May 4, 2010·8 cites·8 claims
- 0979US7671447B2Bipolar transistor and method of manufacturing the sameNXP BV·Filed 2005·Granted Mar 2, 2010·8 cites·11 claims
- 1079US7660180B2Dielectric antifuse for electro-thermally programmable deviceNXP BV·Filed 2005·Granted Feb 9, 2010·7 cites·23 claims
- 1172US8134142B2Tunneling transistor with barrierHURKX GODEFRIDUS·Filed 2007·Granted Mar 13, 2012·7 cites·14 claims
- 1268US7838368B2Nanoscale fetNXP BV·Filed 2005·Granted Nov 23, 2010·10 cites·4 claims
- 1359US9231201B2Electric device with a layer of conductive material contacted by nanowiresVAN SCHAIJK ROBERTUS THEODORUS FRANSISCUS·Filed 2005·Granted Jan 5, 2016·3 cites·3 claims
- 1456US7868424B2Semiconductor device and method of manufacturing the sameNXP BV·Filed 2005·Granted Jan 11, 2011·1 cites·20 claims
- 1546US7538593B2Circuit and method to convert a single ended signal to duplicated signalsINFINEON TECHNOLOGIES AG·Filed 2007·Granted May 26, 2009·1 cites·13 claims
- 1642US2011018065A1Method for manufacturing semiconductor device and semiconductor deviceNXP BV·Filed 2009·Application pending·0 cites
- 1739US7989844B2Semiconductor device and method of manufacturing such a deviceNXP BV·Filed 2004·Granted Aug 2, 2011·0 cites·10 claims
- 1839US7915709B2Semiconductor device and method of manufacturing the sameNXP BV·Filed 2005·Granted Mar 29, 2011·0 cites·20 claims
- 1938US2008258182A1Bicmos Compatible Jfet Device and Method of Manufacturing SameKONINKL PHILIPS ELECTRONICS NV·Filed 2005·Application pending·0 cites
- 2038US2008237871A1Method of Manufacturing a Semiconductor Device and Semiconductor Device Obtained With Such a MethodNXP BV·Filed 2006·Application pending·0 cites
- 2138US2009114950A1Semiconductor Device and Method of Manufacturing such a DeviceKONINKL PHILIPS ELECTRONICS NV·Filed 2005·Application pending·0 cites
- 2237US2009146068A1Radiation dosimeterKONINKL PHILIPS ELECTRONICS NV·Filed 2005·Application pending·0 cites
- 2335US7939854B2Semiconductor device with a bipolar transistor and method of manufacturing such a deviceNXP BV·Filed 2006·Granted May 10, 2011·0 cites·12 claims
- 2434US2007120254A1Semiconductor device comprising a pn-heterojunctionKONINK PHILIPS ELECTRONICS N C·Filed 2004·Application pending·0 cites
- 2532US2007279091A1Digital Voltage Level ShifterGOEL MAYANK·Filed 2004·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →