Inventor · disambiguated record
Pratyush P. Buragohain
Also filed as: BURAGOHAIN PRATYUSH P
0 granted patents·9 pending applications·0 citations·filing 2023–2024
Files withINTEL CORP9
Top patents by PatentIndex Score
9 records- 0159US2025393290A1Ferroelectric field effect transistors (fefets) with relaxor ferroelectric materialsINTEL CORP·Filed 2024·Application pending·0 cites
- 0256US2025380487A1Ferroelectric field effect transistors (fefets) with improper ferroelectric materialsINTEL CORP·Filed 2024·Application pending·0 cites
- 0356US2025107147A1Architectures and methods to modulate contact resistance in 2d materials for use in field effect transistor devicesINTEL CORP·Filed 2023·Application pending·0 cites
- 0455US2024429301A1Perovskite-based field effect transistor (fet) devices enabled by epitaxial lateral overgrowthINTEL CORP·Filed 2023·Application pending·0 cites
- 0554US2025006791A1Perovskite oxide field effect transistor with highly doped source and drainINTEL CORP·Filed 2023·Application pending·0 cites
- 0654US2025113599A1Methods for doping 2d transistor devices and resulting architecturesINTEL CORP·Filed 2023·Application pending·0 cites
- 0753US2025006840A1Negative capacitance field effect transistor (ncfet) devicesINTEL CORP·Filed 2023·Application pending·0 cites
- 0853US2025006839A1P-type perovskite ferroelectric field effect transistor (fefet) devicesINTEL CORP·Filed 2023·Application pending·0 cites
- 0953US2025006841A1Technologies for barrier layers in perovskite transistorsINTEL CORP·Filed 2023·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →