Inventor · disambiguated record
Pr Chidambaram
Also filed as: CHIDAMBARAM PR
26 granted patents·10 pending applications·395 citations·filing 2002–2015
96Inventor score
Top patents by PatentIndex Score
36 records- 0198US7061058B2Forming a retrograde well in a transistor to enhance performance of the transistorTEXAS INSTRUMENTS INC·Filed 2005·Granted Jun 13, 2006·125 cites·12 claims
- 0292US7060579B2Increased drive current by isotropic recess etchTEXAS INSTRUMENTS INC·Filed 2004·Granted Jun 13, 2006·62 cites·17 claims
- 0391US7339215B2Transistor device containing carbon doped silicon in a recess next to MDD to create strain in channelTEXAS INSTRUMENTS INC·Filed 2007·Granted Mar 4, 2008·17 cites·3 claims
- 0488US7122435B2Methods, systems and structures for forming improved transistorsTEXAS INSTRUMENTS INC·Filed 2004·Granted Oct 17, 2006·45 cites·18 claims
- 0586US7208362B2Transistor device containing carbon doped silicon in a recess next to MDD to create strain in channelTEXAS INSTRUMENTS INC·Filed 2004·Granted Apr 24, 2007·32 cites·23 claims
- 0681US9269492B2Bone frame, low resistance via coupled metal oxide-metal (MOM) orthogonal finger capacitorQUALCOMM INC·Filed 2013·Granted Feb 23, 2016·6 cites·22 claims
- 0781US7012028B2Transistor fabrication methods using reduced width sidewall spacersTEXAS INSTRUMENTS INC·Filed 2004·Granted Mar 14, 2006·26 cites·24 claims
- 0880US9252104B2Complementary back end of line (BEOL) capacitorQUALCOMM INC·Filed 2014·Granted Feb 2, 2016·4 cites·12 claims
- 0980US9024418B2Local interconnect structures for high densityQUALCOMM INC·Filed 2013·Granted May 5, 2015·5 cites·20 claims
- 1074US9412818B2System and method of manufacturing a fin field-effect transistor having multiple fin heightsQUALCOMM INC·Filed 2013·Granted Aug 9, 2016·3 cites·28 claims
- 1174US7217626B2Transistor fabrication methods using dual sidewall spacersTEXAS INSTRUMENTS INC·Filed 2004·Granted May 15, 2007·18 cites·21 claims
- 1273US7670892B2Nitrogen based implants for defect reduction in strained siliconTEXAS INSTRUMENTS INC·Filed 2005·Granted Mar 2, 2010·3 cites·7 claims
- 1371US8610176B2Standard cell architecture using double poly patterning for multi VT devicesPATEL PRAYAG B·Filed 2011·Granted Dec 17, 2013·5 cites·22 claims
- 1470US9263522B2Transistor with a diffusion barrierQUALCOMM INC·Filed 2013·Granted Feb 16, 2016·2 cites·17 claims
- 1569US9236483B2FinFET with backgate, without punchthrough, and with reduced fin height variationQUALCOMM INC·Filed 2014·Granted Jan 12, 2016·2 cites·30 claims
- 1667US6927137B2Forming a retrograde well in a transistor to enhance performance of the transistorTEXAS INSTRUMENTS INC·Filed 2003·Granted Aug 9, 2005·9 cites·12 claims
- 1764US9012966B2Capacitor using middle of line (MOL) conductive layersQUALCOMM INC·Filed 2012·Granted Apr 21, 2015·1 cites·8 claims
- 1864US7560324B2Drain extended MOS transistors and methods for making the sameTEXAS INSTRUMENTS INC·Filed 2004·Granted Jul 14, 2009·11 cites·13 claims
- 1962US7244654B2Drive current improvement from recessed SiGe incorporation close to gateTEXAS INSTRUMENTS INC·Filed 2004·Granted Jul 17, 2007·10 cites·20 claims
- 2057US7118977B2System and method for improved dopant profiles in CMOS transistorsTEXAS INSTRUMENTS INC·Filed 2004·Granted Oct 10, 2006·7 cites·10 claims
- 2155US9076775B2System and method of varying gate lengths of multiple coresQUALCOMM INC·Filed 2013·Granted Jul 7, 2015·0 cites·37 claims
- 2252US9461040B2System and method of varying gate lengths of multiple coresQUALCOMM INC·Filed 2015·Granted Oct 4, 2016·0 cites·30 claims
- 2349US9496254B2Capacitor using middle of line (MOL) conductive layersQUALCOMM INC·Filed 2015·Granted Nov 15, 2016·0 cites·12 claims
- 2445US6818518B1Method for producing low/high voltage threshold transistors in semiconductor processingTEXAS INSTRUMENTS INC·Filed 2003·Granted Nov 16, 2004·2 cites·27 claims
- 2545US2015303145A1Back end of line (beol) local optimization to improve product performanceQUALCOMM INC·Filed 2014·Application pending·0 cites
- 2643US2004248354A1System and method for depositing a graded carbon layer to enhance critical layer stabilityFiled 2004·Application pending·0 cites
- 2742US2014203404A1Spiral metal-on-metal (smom) capacitors, and related systems and methodsQUALCOMM INC·Filed 2013·Application pending·0 cites
- 2841US2013320494A1Metal finger capacitors with hybrid metal finger orientations in stack with unidirectional metal layersQUALCOMM INC·Filed 2012·Application pending·0 cites
- 2941US2015001631A1Cmos technology integrationQUALCOMM INC·Filed 2013·Application pending·0 cites
- 3040US7101751B2Versatile system for limiting electric field degradation of semiconductor structuresTEXAS INSTRUMENTS INC·Filed 2004·Granted Sep 5, 2006·0 cites·16 claims
- 3140US2014197519A1Mim capacitor and mim capacitor fabrication for semiconductor devicesQUALCOMM INC·Filed 2013·Application pending·0 cites
- 3240US2014197520A1Resistor and resistor fabrication for semiconductor devicesQUALCOMM INC·Filed 2013·Application pending·0 cites
- 3337US6573165B2Method of providing polysilicon spacer for implantationTEXAS INSTRUMENTS INC·Filed 2002·Granted Jun 3, 2003·0 cites·17 claims
- 3437US2004031970A1Process for retarding lateral diffusion of phosphorousFiled 2002·Application pending·0 cites
- 3534US2004191999A1Semiconductor structure and method of fabricationTEXAS INSTR INCROPORATED·Filed 2003·Application pending·0 cites
- 3634US2003124790A1Versatile system for PMOS I/O transistor integrationFiled 2002·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →