Inventor · disambiguated record
Pratik Koirala
Also filed as: KOIRALA PRATIK
4 granted patents·15 pending applications·0 citations·filing 2020–2025
54Inventor score
Files withINTEL CORP19
Top patents by PatentIndex Score
19 records- 0174US2025040231A1Gallium nitride (gan) three-dimensional integrated circuit technologyINTEL CORP·Filed 2024·Application pending·0 cites
- 0272US2025231358A1Gallium nitride (gan) integrated circuit technology with optical communicationINTEL CORP·Filed 2025·Application pending·0 cites
- 0366US12292608B2Gallium nitride (GaN) integrated circuit technology with optical communicationINTEL CORP·Filed 2021·Granted May 6, 2025·0 cites·20 claims
- 0464US12148747B2Gallium nitride (GAN) three-dimensional integrated circuit technologyINTEL CORP·Filed 2020·Granted Nov 19, 2024·0 cites·21 claims
- 0559US2025309100A1Low resistivity conductor subtractively patterned interconnects using layer transfer of microstructure engineered thin filmsINTEL CORP·Filed 2024·Application pending·0 cites
- 0656US12336268B2Gallium nitride (GaN) integrated circuit technologyINTEL CORP·Filed 2021·Granted Jun 17, 2025·0 cites·19 claims
- 0752US12302618B2Gallium nitride (GaN) selective epitaxial windows for integrated circuit technologyINTEL CORP·Filed 2021·Granted May 13, 2025·0 cites·20 claims
- 0852US2024213331A1Gallium nitride (gan) layer on substrate carburization for integrated circuit technologyINTEL CORP·Filed 2022·Application pending·0 cites
- 0948US2024213140A1Integrated circuit structures having backside highINTEL CORP·Filed 2022·Application pending·0 cites
- 1048US2024204059A1Gallium nitride (gan) with interlayers for integrated circuit technologyINTEL CORP·Filed 2022·Application pending·0 cites
- 1147US2024204091A1Low aluminum concentration aluminum gallium nitride interlayer for group iii-nitride (iii-n) devicesINTEL CORP·Filed 2022·Application pending·0 cites
- 1247US2024213118A1Gallium nitride (gan) devices with through-silicon viasINTEL CORP·Filed 2022·Application pending·0 cites
- 1346US2023054719A1Gallium nitride (gan) layer transfer and regrowth for integrated circuit technologyINTEL CORP·Filed 2021·Application pending·0 cites
- 1445US2022102344A1Gallium nitride (gan) three-dimensional integrated circuit technologyINTEL CORP·Filed 2020·Application pending·0 cites
- 1545US2024021725A1Gallium nitride (gan) transistors with lateral drain depletionINTEL CORP·Filed 2022·Application pending·0 cites
- 1645US2023066336A1Gallium nitride (gan) epitaxy on patterned substrate for integrated circuit technologyINTEL CORP·Filed 2021·Application pending·0 cites
- 1744US2023090106A1Gallium nitride (gan) layer transfer for integrated circuit technologyINTEL CORP·Filed 2021·Application pending·0 cites
- 1844US2023069054A1Gallium nitride (gan) integrated circuit technology with multi-layer epitaxy and layer transferINTEL CORP·Filed 2021·Application pending·0 cites
- 1941US2022093683A13d heterogeneous integrated crystalline piezoelectric bulk acoustic resonatorsINTEL CORP·Filed 2020·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →