Inventor · disambiguated record

Pravanshu Mohanta

Also filed as: MOHANTA PRAVANSHU

3 granted patents·4 pending applications·3 citations·filing 2020–2025

58Inventor score

Technology areasH10P

Files withTAIWAN SEMICONDUCTOR MFG CO LTD7

Top patents by PatentIndex Score

7 records

0186US12356651B2Method of manufacturing high-electron-mobility transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 8, 2025·1 cites·20 claims
0282US11804374B2Strain relief trenches for epitaxial growthTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 31, 2023·1 cites·20 claims
0381US11855199B2High Electron Mobility Transistor (HEMT) with a back barrier layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 26, 2023·1 cites·20 claims
0473US2024088284A1High electron mobility transistor (hemt) with a back barrier layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
0572US2025301689A1High-electron-mobility transistor and method of manufacturingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
0669US2023377881A1Strain relief trenches for epitaxial growthTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
0768US2022384630A1High electron mobility transistor (hemt) with a back barrier layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →