Inventor · disambiguated record
Pratyush Pandey
Also filed as: PANDEY PRATYUSH
25 granted patents·89 citations·filing 2021–2022
95Inventor score
Files withKEPLER COMPUTING INC25
Top patents by PatentIndex Score
25 records- 0199US11545204B1Non-linear polar material based memory bit-cell with multi-level storage by applying different voltage levelsKEPLER COMPUTING INC·Filed 2021·Granted Jan 3, 2023·10 cites·20 claims
- 0299US11532635B1High-density low voltage multi-element ferroelectric gain memory bit-cell with pillar capacitorsKEPLER COMPUTING INC·Filed 2021·Granted Dec 20, 2022·10 cites·19 claims
- 0399US11521666B1High-density low voltage multi-element ferroelectric gain memory bit-cell with planar capacitorsKEPLER COMPUTING INC·Filed 2021·Granted Dec 6, 2022·6 cites·20 claims
- 0499US11521667B1Stacked ferroelectric planar capacitors in a memory bit-cellKEPLER COMPUTING INC·Filed 2021·Granted Dec 6, 2022·11 cites·17 claims
- 0599US11501813B1Method of forming stacked ferroelectric non- planar capacitors in a memory bit-cellKEPLER COMPUTING INC·Filed 2021·Granted Nov 15, 2022·11 cites·20 claims
- 0699US11423967B1Stacked ferroelectric non-planar capacitors in a memory bit-cellKEPLER COMPUTING INC·Filed 2021·Granted Aug 23, 2022·35 cites·20 claims
- 0798US11955512B1Dual hydrogen barrier layer for trench capacitors integrated with low density film for logic structures and methods of fabricationKEPLER COMPUTING INC·Filed 2021·Granted Apr 9, 2024·3 cites·18 claims
- 0897US11527277B1High-density low voltage ferroelectric memory bit-cellKEPLER COMPUTING INC·Filed 2021·Granted Dec 13, 2022·3 cites·24 claims
- 0984US11810608B1Manganese or scandium doped multi-element non-linear polar material gain memory bit-cellKEPLER COMPUTING INC·Filed 2022·Granted Nov 7, 2023·0 cites·20 claims
- 1080US12034086B1Trench capacitors with continuous dielectric layer and methods of fabricationKEPLER COMPUTING INC·Filed 2021·Granted Jul 9, 2024·0 cites·18 claims
- 1180US12029043B1Planar and trench capacitors with hydrogen barrier dielectric for logic and memory applications and methods of fabricationKEPLER COMPUTING INC·Filed 2021·Granted Jul 2, 2024·0 cites·19 claims
- 1280US12022662B1Planar and trench capacitors for logic and memory applications and methods of fabricationKEPLER COMPUTING INC·Filed 2021·Granted Jun 25, 2024·0 cites·19 claims
- 1380US12016185B1Planar and trench capacitors for logic and memory applicationsKEPLER COMPUTING INC·Filed 2021·Granted Jun 18, 2024·0 cites·20 claims
- 1480US11996438B1Pocket flow for trench capacitors integrated with planar capacitors on a same substrate and method of fabricationKEPLER COMPUTING INC·Filed 2021·Granted May 28, 2024·0 cites·20 claims
- 1580US11985832B1Planar and trench capacitors with hydrogen barrier dielectric for logic and memory applicationsKEPLER COMPUTING INC·Filed 2021·Granted May 14, 2024·0 cites·20 claims
- 1680US11961877B1Dual hydrogen barrier layer for trench capacitors integrated with low density film for logic structuresKEPLER COMPUTING INC·Filed 2021·Granted Apr 16, 2024·0 cites·16 claims
- 1778US11605411B1Method of forming stacked ferroelectric planar capacitors in a memory bit-cellKEPLER COMPUTING INC·Filed 2021·Granted Mar 14, 2023·0 cites·17 claims
- 1877US12094923B2Rapid thermal annealing (RTA) methodologies for integration of perovskite-material based memory devicesKEPLER COMPUTING INC·Filed 2022·Granted Sep 17, 2024·0 cites·13 claims
- 1977US11908704B2Method of fabricating a perovskite-material based planar capacitor using rapid thermal annealing (RTA) methodologiesKEPLER COMPUTING INC·Filed 2022·Granted Feb 20, 2024·0 cites·20 claims
- 2076US11894417B2Method of fabricating a perovskite-material based trench capacitor using rapid thermal annealing (RTA) methodologiesKEPLER COMPUTING INC·Filed 2022·Granted Feb 6, 2024·0 cites·20 claims
- 2176US11769790B2Rapid thermal annealing (RTA) methodologies for integration of perovskite-material based trench capacitorsKEPLER COMPUTING INC·Filed 2022·Granted Sep 26, 2023·0 cites·21 claims
- 2275US11532342B1Non-linear polar material based differential multi-memory element bit-cellKEPLER COMPUTING INC·Filed 2021·Granted Dec 20, 2022·0 cites·20 claims
- 2375US11527278B1Non-linear polar material based memory bit-cell with multi-level storage by applying different time pulse widthsKEPLER COMPUTING INC·Filed 2021·Granted Dec 13, 2022·0 cites·20 claims
- 2475US11514966B1Non-linear polar material based multi-memory element bit-cell with multi-level storageKEPLER COMPUTING INC·Filed 2021·Granted Nov 29, 2022·0 cites·20 claims
- 2575US11514967B1Non-linear polar material based differential multi-memory element gain bit-cellKEPLER COMPUTING INC·Filed 2021·Granted Nov 29, 2022·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →