Inventor · disambiguated record
Prasad Venkatraman
Also filed as: VENKATRAMAN PRASAD
91 granted patents·6 pending applications·531 citations·filing 1992–2023
99Inventor score
Files withSEMICONDUCTOR COMPONENTS IND LLC44SEMICONDUCTOR COMPONENTS IND30BURKE PETER A3PADMANABHAN BALAJI3VENKATRAMAN PRASAD3
Top patents by PatentIndex Score
97 records- 0194US8466513B2Semiconductor device with enhanced mobility and methodGRIVNA GORDON M·Filed 2011·Granted Jun 18, 2013·16 cites·35 claims
- 0292US8723238B1Method of forming a transistor and structure thereforPADMANABHAN BALAJI·Filed 2013·Granted May 13, 2014·17 cites·20 claims
- 0392US8034685B1Semiconductor component and method of manufactureSEMICONDUCTOR COMPONENT IND LLC·Filed 2010·Granted Oct 11, 2011·24 cites·26 claims
- 0492US5897343AMethod of making a power switching trench MOSFET having aligned source regionsMOTOROLA INC·Filed 1998·Granted Apr 27, 1999·119 cites·7 claims
- 0591US9748224B2Heterojunction semiconductor device having integrated clamping deviceSEMICONDUCTOR COMPONENTS IND LLC·Filed 2015·Granted Aug 29, 2017·6 cites·31 claims
- 0691US9048214B2Bidirectional field effect transistor and methodPADMANABHAN BALAJI·Filed 2012·Granted Jun 2, 2015·14 cites·11 claims
- 0790US10128174B2Semiconductor component and method of manufactureSEMICONDUCTOR COMPONENTS IND LLC·Filed 2016·Granted Nov 13, 2018·6 cites·16 claims
- 0890US9159797B2Electronic device comprising conductive structures and an insulating layer between the conductive structures and within a trenchSEMICONDUCTOR COMPONENTS IND·Filed 2013·Granted Oct 13, 2015·9 cites·20 claims
- 0990US8415739B2Semiconductor component and method of manufactureVENKATRAMAN PRASAD·Filed 2008·Granted Apr 9, 2013·22 cites·10 claims
- 1090US6818946B1Trench MOSFET with increased channel densitySEMICONDUCTOR COMPONENTS IND·Filed 2000·Granted Nov 16, 2004·42 cites·18 claims
- 1189US9502550B2High electron mobility semiconductor device and method thereforSEMICONDUCTOR COMPONENTS IND LLC·Filed 2015·Granted Nov 22, 2016·5 cites·20 claims
- 1288US8648412B1Trench power field effect transistor device and methodBURKE PETER A·Filed 2012·Granted Feb 11, 2014·9 cites·20 claims
- 1387US10749019B2Circuit and electronic device including an enhancement-mode transistorSEMICONDUCTOR COMPONENTS IND·Filed 2018·Granted Aug 18, 2020·4 cites·17 claims
- 1487US9882020B2Cascode configured semiconductor componentSEMICONDUCTOR COMPONENTS IND LLC·Filed 2016·Granted Jan 30, 2018·4 cites·20 claims
- 1587US7915672B2Semiconductor device having trench shield electrode structureSEMICONDUCTOR COMPONENTS IND·Filed 2008·Granted Mar 29, 2011·13 cites·21 claims
- 1686US9029215B2Method of making an insulated gate semiconductor device having a shield electrode structureHOSSAIN ZIA·Filed 2012·Granted May 12, 2015·8 cites·20 claims
- 1786US8021947B2Method of forming an insulated gate field effect transistor device having a shield electrode structureSEMICONDUCTOR COMPONENTS IND·Filed 2009·Granted Sep 20, 2011·13 cites·22 claims
- 1885US9129889B2High electron mobility semiconductor device and method thereforSEMICONDUCTOR COMPONENTS IND·Filed 2014·Granted Sep 8, 2015·6 cites·20 claims
- 1983US9245963B2Insulated gate semiconductor device structureSEMICONDUCTOR COMPONENTS IND·Filed 2014·Granted Jan 26, 2016·5 cites·23 claims
- 2083US6982193B2Method of forming a super-junction semiconductor deviceSEMICONDUCTOR COMPONENTS IND·Filed 2004·Granted Jan 3, 2006·32 cites·20 claims
- 2181US10199373B2Method of forming a heterojunction semiconductor device having integrated clamping deviceSEMICONDUCTOR COMPONENTS IND LLC·Filed 2017·Granted Feb 5, 2019·2 cites·21 claims
- 2281US8889532B2Method of making an insulated gate semiconductor device and structureBURKE PETER A·Filed 2011·Granted Nov 18, 2014·5 cites·22 claims
- 2380US8928050B2Electronic device including a schottky contactLOECHELT GARY H·Filed 2013·Granted Jan 6, 2015·5 cites·19 claims
- 2479US10600905B1Trench MOSFET contactsSEMICONDUCTOR COMPONENTS IND LLC·Filed 2018·Granted Mar 24, 2020·2 cites·20 claims
- 2579US9735095B2Semiconductor component and method of manufactureSEMICONDUCTOR COMPONENTS IND LLC·Filed 2016·Granted Aug 15, 2017·3 cites·20 claims
- 2679US9660062B2Bidirectional HEMT and an electronic package including the bidirectional HEMTSEMICONDUCTOR COMPONENTS IND LLC·Filed 2016·Granted May 23, 2017·2 cites·19 claims
- 2778US10276686B2Cascode configured semiconductor componentSEMICONDUCTOR COMPONENTS IND LLC·Filed 2018·Granted Apr 30, 2019·2 cites·20 claims
- 2878US9818854B2Electronic device including a bidirectional HEMTSEMICONDUCTOR COMPONENTS IND LLC·Filed 2016·Granted Nov 14, 2017·2 cites·20 claims
- 2977US6987040B2Trench MOSFET with increased channel densitySEMICONDUCTOR COMPONENTS IND·Filed 2004·Granted Jan 17, 2006·16 cites·20 claims
- 3076US11990515B2Up-diffusion suppression in a power MOSFETSEMICONDUCTOR COMPONENTS IND LLC·Filed 2022·Granted May 21, 2024·0 cites·20 claims
- 3174US7767529B2Semiconductor component and method of manufactureSEMICONDUCTOR COMPONENETS IND·Filed 2007·Granted Aug 3, 2010·6 cites·15 claims
- 3274US7714381B2Method of forming an integrated power device and structureSEMICONDUCTOR COMPONENTS IND·Filed 2005·Granted May 11, 2010·3 cites·12 claims
- 3373US10218350B2Circuit with transistors having coupled gatesSEMICONDUCTOR COMPONENTS IND LLC·Filed 2016·Granted Feb 26, 2019·2 cites·20 claims
- 3473US9306018B2Trench shielding structure for semiconductor device and methodSEMICONDUCTOR COMPONENTS IND·Filed 2014·Granted Apr 5, 2016·2 cites·24 claims
- 3573US8207035B2Method of forming an integrated power device and structureROBB FRANCINE Y·Filed 2010·Granted Jun 26, 2012·2 cites·12 claims
- 3673US8048740B2Vertical MOS transistor and method thereforSEMICONDUCTOR COMPONENTS IND·Filed 2009·Granted Nov 1, 2011·4 cites·9 claims
- 3771US9905500B2Semiconductor component and method of manufactureSEMICONDUCTOR COMPONENTS IND LLC·Filed 2016·Granted Feb 27, 2018·2 cites·20 claims
- 3871US8362548B2Contact structure for semiconductor device having trench shield electrode and methodSEMICONDUCTOR COMPONENTS IND·Filed 2008·Granted Jan 29, 2013·4 cites·22 claims
- 3971US7189608B2Semiconductor device having reduced gate charge and reduced on resistance and methodSEMICONDUCTOR COMPONENTS IND·Filed 2003·Granted Mar 13, 2007·16 cites·15 claims
- 4070US10658351B2Electronic device including a transistor having structures with different characteristicsSEMICONDUCTOR COMPONENTS IND LLC·Filed 2018·Granted May 19, 2020·1 cites·19 claims
- 4169US11049956B2Method of forming a semiconductor deviceSEMICONDUCTOR COMPONENTS IND LLC·Filed 2019·Granted Jun 29, 2021·1 cites·20 claims
- 4268US9466708B2Method of forming a transistor and structure thereforPADMANABHAN BALAJI·Filed 2013·Granted Oct 11, 2016·2 cites·19 claims
- 4368US7939897B2Method of forming a low resistance semiconductor contact and structure thereforSEMICONDUCTOR COMPONENTS IND·Filed 2010·Granted May 10, 2011·2 cites·7 claims
- 4468US7736984B2Method of forming a low resistance semiconductor contact and structure thereforSEMICONDUCTOR COMPONENTS IND·Filed 2005·Granted Jun 15, 2010·3 cites·18 claims
- 4567US10056499B2Bidirectional JFET and a process of forming the sameSEMICONDUCTOR COMPONENTS IND LLC·Filed 2016·Granted Aug 21, 2018·1 cites·20 claims
- 4666US11742420B2Semiconductor device and structure thereforSEMICONDUCTOR COMPONENTS IND LLC·Filed 2021·Granted Aug 29, 2023·0 cites·20 claims
- 4765US9450091B2Semiconductor device with enhanced mobility and methodSEMICONDUCTOR COMPONENTS IND LLC·Filed 2014·Granted Sep 20, 2016·1 cites·13 claims
- 4865US8304314B2Method of forming an MOS transistorPEARSE JEFFREY·Filed 2008·Granted Nov 6, 2012·4 cites·15 claims
- 4965US8138033B2Semiconductor component and method of manufactureHOSSAIN ZIA·Filed 2007·Granted Mar 20, 2012·3 cites·19 claims
- 5064US11527618B2Up-diffusion suppression in a power MOSFETSEMICONDUCTOR COMPONENTS IND LLC·Filed 2020·Granted Dec 13, 2022·0 cites·20 claims
Showing the top 50 of 97 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →