Inventor · disambiguated record
Punyashloka Debashis
Also filed as: DEBASHIS PUNYASHLOKA
5 granted patents·28 pending applications·0 citations·filing 2021–2024
58Inventor score
Files withINTEL CORP33
Top patents by PatentIndex Score
33 records- 0165US12433172B2Spin-orbit readout using transition metal dichalcogenides and proximitized grapheneINTEL CORP·Filed 2022·Granted Sep 30, 2025·0 cites·20 claims
- 0262US11900979B2Probabilistic in-memory computingINTEL CORP·Filed 2021·Granted Feb 13, 2024·0 cites·26 claims
- 0360US12406713B2Probabilistic computing devices based on stochastic switching in a ferroelectric field-effect transistorINTEL CORP·Filed 2021·Granted Sep 2, 2025·0 cites·24 claims
- 0458US12457910B2Magnetoelectric spin-orbit device with in-plane and perpendicular magnetic layers and method of manufacturing sameINTEL CORP·Filed 2022·Granted Oct 28, 2025·0 cites·25 claims
- 0557US2025311376A1Coupled multi-layer magnetoelectric, ferroelectric, and ferromagnetic structuresINTEL CORP·Filed 2024·Application pending·0 cites
- 0656US2025380487A1Ferroelectric field effect transistors (fefets) with improper ferroelectric materialsINTEL CORP·Filed 2024·Application pending·0 cites
- 0756US2025311636A1Magnetoelectric spin–orbit (meso) device with unconventional spin-to-charge conversionINTEL CORP·Filed 2024·Application pending·0 cites
- 0856US2025008852A1Two-terminal ferroelectric perovskite diode memory elementINTEL CORP·Filed 2023·Application pending·0 cites
- 0956US2025221318A1Magnetoelectric spin–orbit (meso) device with antiferromagnetic spin injection and spin absorption for increased output voltageINTEL CORP·Filed 2023·Application pending·0 cites
- 1056US2025311639A1Spin-to-charge conversion using extrinsic spin hall effect and orbital hall effectINTEL CORP·Filed 2024·Application pending·0 cites
- 1155US2024429301A1Perovskite-based field effect transistor (fet) devices enabled by epitaxial lateral overgrowthINTEL CORP·Filed 2023·Application pending·0 cites
- 1254US2025173124A1Generalized distribution true random number generator (trng) with autonomously learning probabilistic circuitsINTEL CORP·Filed 2023·Application pending·0 cites
- 1354US2024147867A1Magnetoelectric logic with magnetic tunnel junctionsINTEL CORP·Filed 2022·Application pending·0 cites
- 1454US2025006791A1Perovskite oxide field effect transistor with highly doped source and drainINTEL CORP·Filed 2023·Application pending·0 cites
- 1553US2025006840A1Negative capacitance field effect transistor (ncfet) devicesINTEL CORP·Filed 2023·Application pending·0 cites
- 1653US2025006839A1P-type perovskite ferroelectric field effect transistor (fefet) devicesINTEL CORP·Filed 2023·Application pending·0 cites
- 1753US2025006841A1Technologies for barrier layers in perovskite transistorsINTEL CORP·Filed 2023·Application pending·0 cites
- 1852US2024113212A1Technologies for perovskite transistorsINTEL CORP·Filed 2022·Application pending·0 cites
- 1951US2024222475A1Technologies for high-performance magnetoelectric spin-orbit logicINTEL CORP·Filed 2022·Application pending·0 cites
- 2051US2024206348A1Probabilistic and deterministic logic devices with reduced symmetry materialsINTEL CORP·Filed 2022·Application pending·0 cites
- 2151US2024113220A1Technologies for transistors with a thin-film ferroelectricINTEL CORP·Filed 2022·Application pending·0 cites
- 2251US2024224814A1Chiral coupling-based valleytronic magnetoelectric spin-orbit devicesINTEL CORP·Filed 2022·Application pending·0 cites
- 2350US12484457B2Differentially programmable magnetic tunnel junction device and system including sameINTEL CORP·Filed 2021·Granted Nov 25, 2025·0 cites·23 claims
- 2450US2024222506A1Field effect transistor comprising transition metal dichalcogenide (tmd) and ferroelectric materialINTEL CORP·Filed 2022·Application pending·0 cites
- 2550US2024105810A1Vertical ferrorelectric field-effect transistor (fefet) devicesINTEL CORP·Filed 2022·Application pending·0 cites
- 2650US2024097031A1Ferrorelectric field-effect transistor (fefet) devices with low operating voltage capabilitiesINTEL CORP·Filed 2022·Application pending·0 cites
- 2749US2023317729A1Vertical bit data paths for integrated circuitsINTEL CORP·Filed 2022·Application pending·0 cites
- 2849US2023413684A1Valleytronic logic devices comprising monochalcogenidesINTEL CORP·Filed 2022·Application pending·0 cites
- 2949US2024105822A1Stacked perovskite ferroelectric field effect transistor (fefet) devicesINTEL CORP·Filed 2022·Application pending·0 cites
- 3048US2023284457A1Interconnects with spintronic logic devicesINTEL CORP·Filed 2022·Application pending·0 cites
- 3148US2025219581A1Oscillator array coupling through ferroelectric capacitorsINTEL CORP·Filed 2023·Application pending·0 cites
- 3247US2023189659A1Synthetic antiferromagnet-based probabilistic computing devicesINTEL CORP·Filed 2021·Application pending·0 cites
- 3345US2023070486A1Technologies for magnetic-tunnel-junction-based random number generationINTEL CORP·Filed 2021·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →