Inventor · disambiguated record
Pu-Ju Kung
Also filed as: KUNG PU-JU
7 granted patents·1 pending application·202 citations·filing 2000–2014
84Inventor score
Files withVISHAY GEN SEMICONDUCTOR LLC3KAO LUNG-CHING2IND TECH RES INST1IND TECHNOLOGY RES INST AND GE1KUNG PU-JU1
Top patents by PatentIndex Score
8 records- 0190US6396090B1Trench MOS device and termination structureIND TECH RES INST·Filed 2000·Granted May 28, 2002·73 cites·17 claims
- 0290US6309929B1Method of forming trench MOS device and termination structureIND TECHNOLOGY RES INST AND GE·Filed 2000·Granted Oct 30, 2001·115 cites·25 claims
- 0371US7755102B2High breakdown voltage diode and method of forming sameVISHAY GEN SEMICONDUCTOR LLC·Filed 2006·Granted Jul 13, 2010·5 cites·16 claims
- 0471US7560355B2Semiconductor wafer suitable for forming a semiconductor junction diode device and method of forming sameVISHAY GEN SEMICONDUCTOR LLC·Filed 2006·Granted Jul 14, 2009·4 cites·20 claims
- 0569US8982524B2Low forward voltage drop transient voltage suppressor and method of fabricatingKAO LUNG-CHING·Filed 2012·Granted Mar 17, 2015·3 cites·33 claims
- 0658US8111495B2Low forward voltage drop transient voltage suppressor and method of fabricatingKAO LUNG-CHING·Filed 2007·Granted Feb 7, 2012·2 cites·24 claims
- 0738US2006216913A1Asymmetric bidirectional transient voltage suppressor and method of forming sameKUNG PU-JU·Filed 2005·Application pending·0 cites
- 0834US9178015B2Trench MOS device having a termination structure with multiple field-relaxation trenches for high voltage applicationsVISHAY GEN SEMICONDUCTOR LLC·Filed 2014·Granted Nov 3, 2015·0 cites·18 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →