Inventor · disambiguated record
Qinhai Jin
Also filed as: JIN QINHAI
6 granted patents·1 pending application·2 citations·filing 2013–2016
68Inventor score
Top patents by PatentIndex Score
7 records- 0160US8907413B1Dual trench MOS transistor and method for forming the sameCHIP INTEGRATION TECH CO LTD·Filed 2013·Granted Dec 9, 2014·2 cites·8 claims
- 0248US9276096B2Structure of a trench MOS rectifier and method of forming the sameCHIP INTEGRATION TECH CO LTD·Filed 2014·Granted Mar 1, 2016·0 cites·4 claims
- 0345US9406788B2Structure of a trench MOS rectifier and method of forming the sameCHIP INTEGRATION TECH CO LTD·Filed 2015·Granted Aug 2, 2016·0 cites·3 claims
- 0445US2014374818A1Structure of Trench-Vertical Double Diffused MOS Transistor and Method of Forming the SameJIN QINHAI·Filed 2014·Application pending·0 cites
- 0544US9117902B2Dual trench rectifier and method for forming the sameCHIP INTEGRATION TECH CO LTD·Filed 2013·Granted Aug 25, 2015·0 cites·5 claims
- 0643US10529844B2Structure of trench-vertical double diffused MOS transistor and method of forming the sameCHIP INTEGRATION TECH CO LTD·Filed 2016·Granted Jan 7, 2020·0 cites·2 claims
- 0742US9443846B2Dual trench rectifier and method for forming the sameCHIP INTEGRATION TECH CO LTD·Filed 2015·Granted Sep 13, 2016·0 cites·6 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →