Inventor · disambiguated record
Qiang Rui
Also filed as: RUI QIANG
8 granted patents·10 citations·filing 2013–2022
77Inventor score
Top patents by PatentIndex Score
8 records- 0179US9620615B2IGBT manufacturing methodCSMC TECHNOLOGIES FAB1 CO LTD·Filed 2014·Granted Apr 11, 2017·4 cites·8 claims
- 0277US9673193B2Manufacturing method for reverse conducting insulated gate bipolar transistorCSMC TECHNOLOGIES FAB1 CO LTD·Filed 2014·Granted Jun 6, 2017·4 cites·10 claims
- 0366US9443926B2Field-stop reverse conducting insulated gate bipolar transistor and manufacturing method thereforCSMC TECHNOLOGIES FAB1 CO LTD·Filed 2014·Granted Sep 13, 2016·2 cites·10 claims
- 0449US9607851B2Method for removing polysilicon protection layer on a back face of an IGBT having a field stop structureCSMC TECHNOLOGIES FAB1 CO LTD·Filed 2013·Granted Mar 28, 2017·0 cites·20 claims
- 0548US9666682B2Reverse conduction insulated gate bipolar transistor (IGBT) manufacturing methodCSMC TECHNOLOGIES FAB1 CO LTD·Filed 2014·Granted May 30, 2017·0 cites·9 claims
- 0645US12046664B2Vertical semiconductor structure with integrated sampling structure and method for manufacturing sameWUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO LTD·Filed 2022·Granted Jul 23, 2024·0 cites·16 claims
- 0745US10096699B2Field-stop reverse conducting insulated gate bipolar transistor and manufacturing method thereforCSMC TECHNOLOGIES FAB1 CO LTD·Filed 2014·Granted Oct 9, 2018·0 cites·10 claims
- 0840US9595520B2IGBT with built-in diode and manufacturing method thereforCSMC TECHNOLOGIES FAB1 CO LTD·Filed 2014·Granted Mar 14, 2017·0 cites·8 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →