Inventor · disambiguated record
Qian Tao
Also filed as: TAO QIAN
94 granted patents·11 pending applications·611 citations·filing 2002–2025
99Inventor score
Files withYANGTZE MEMORY TECH CO LTD45MICRON TECHNOLOGY INC31AVAGO TECHNOLOGIES GENERAL IP8HEWLETT PACKARD DEVELOPMENT CO5INTEL CORP3
Top patents by PatentIndex Score
105 records- 0198US11133325B2Memory cell structure of a three-dimensional memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Sep 28, 2021·14 cites·9 claims
- 0298US10403631B1Three-dimensional ferroelectric memory devicesWUXI PETABYTE TECH CO LTD·Filed 2018·Granted Sep 3, 2019·72 cites·30 claims
- 0398US10283452B2Three-dimensional memory devices having a plurality of NAND stringsYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted May 7, 2019·61 cites·13 claims
- 0498US10147732B1Source structure of three-dimensional memory device and method for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted Dec 4, 2018·66 cites·21 claims
- 0598US9305929B1Memory cellsMICRON TECHNOLOGY INC·Filed 2015·Granted Apr 5, 2016·60 cites·35 claims
- 0697US10083981B2Memory arrays, and methods of forming memory arraysMICRON TECHNOLOGY INC·Filed 2017·Granted Sep 25, 2018·22 cites·17 claims
- 0797US9231206B2Methods of forming a ferroelectric memory cellMICRON TECHNOLOGY INC·Filed 2013·Granted Jan 5, 2016·21 cites·20 claims
- 0896US9673203B2Memory cellsMICRON TECHNOLOGY INC·Filed 2016·Granted Jun 6, 2017·7 cites·28 claims
- 0995US10193064B2Memory cells including dielectric materials, memory devices including the memory cells, and methods of forming sameMICRON TECHNOLOGY INC·Filed 2017·Granted Jan 29, 2019·8 cites·16 claims
- 1095US9716225B2Memory cells including dielectric materials, memory devices including the memory cells, and methods of forming sameMICRON TECHNOLOGY INC·Filed 2014·Granted Jul 25, 2017·10 cites·27 claims
- 1194US11031333B2Three-dimensional memory devices having a plurality of NAND stringsYANGTZE MEMORY TECH CO LTD·Filed 2019·Granted Jun 8, 2021·8 cites·19 claims
- 1294US10580788B2Methods for forming three-dimensional memory devicesYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted Mar 3, 2020·14 cites·20 claims
- 1394US9887204B2Memory cellsMICRON TECHNOLOGY INC·Filed 2017·Granted Feb 6, 2018·4 cites·19 claims
- 1494US9397143B2Liner for phase change memory (PCM) array and associated techniques and configurationsINTEL CORP·Filed 2013·Granted Jul 19, 2016·14 cites·7 claims
- 1593US10923657B2Methods of forming memory cells and memory devicesMICRON TECHNOLOGY INC·Filed 2019·Granted Feb 16, 2021·5 cites·18 claims
- 1693US10242989B2Polar, chiral, and non-centro-symmetric ferroelectric materials, memory cells including such materials, and related devices and methodsMICRON TECHNOLOGY INC·Filed 2014·Granted Mar 26, 2019·8 cites·15 claims
- 1793US10217753B2Memory cellsMICRON TECHNOLOGY INC·Filed 2018·Granted Feb 26, 2019·3 cites·16 claims
- 1893US9087853B2Isolation deviceAVAGO TECHNOLOGIES GENERAL IP·Filed 2013·Granted Jul 21, 2015·16 cites·20 claims
- 1992US11211397B2Three-dimensional memory devices and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted Dec 28, 2021·6 cites·14 claims
- 2092US10680003B2Staircase structure for memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted Jun 9, 2020·6 cites·12 claims
- 2192US10658378B2Through array contact (TAC) for three-dimensional memory devicesYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted May 19, 2020·9 cites·20 claims
- 2292US9147689B1Methods of forming ferroelectric capacitorsMICRON TECHNOLOGY INC·Filed 2014·Granted Sep 29, 2015·13 cites·30 claims
- 2391US10868031B2Multiple-stack three-dimensional memory device and fabrication method thereofYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted Dec 15, 2020·5 cites·6 claims
- 2491US9793203B2Isolation deviceAVAGO TECHNOLOGIES GENERAL IP·Filed 2015·Granted Oct 17, 2017·11 cites·34 claims
- 2591US9576891B1Isolation deviceAVAGO TECHNOLOGIES GENERAL IP·Filed 2015·Granted Feb 21, 2017·9 cites·22 claims
- 2690US11991880B2Three-dimensional memory devices and fabricating methods thereofYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted May 21, 2024·2 cites·9 claims
- 2790US10403630B2Semiconductor devices including ferroelectric materialsMICRON TECHNOLOGY INC·Filed 2018·Granted Sep 3, 2019·3 cites·20 claims
- 2890US2025098175A1Electronic devices including ferroelectric materials, and related memory devicesMICRON TECHNOLOGY INC·Filed 2024·Application pending·0 cites
- 2989US10515975B1Method for forming dual-deck channel hole structure of three-dimensional memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted Dec 24, 2019·6 cites·20 claims
- 3089US8692200B2Optical proximity sensor with improved dynamic range and sensitivityTAO QIAN·Filed 2010·Granted Apr 8, 2014·17 cites·20 claims
- 3188US10418554B2Methods of forming memory cells and semiconductor devicesMICRON TECHNOLOGY INC·Filed 2018·Granted Sep 17, 2019·3 cites·18 claims
- 3288US9520354B1Silicon designs for high voltage isolationAVAGO TECHNOLOGIES GENERAL IP·Filed 2015·Granted Dec 13, 2016·7 cites·20 claims
- 3387US10937806B2Through array contact (TAC) for three-dimensional memory devicesYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Mar 2, 2021·2 cites·20 claims
- 3487US9698343B2Semiconductor device structures including ferroelectric memory cellsMICRON TECHNOLOGY INC·Filed 2015·Granted Jul 4, 2017·3 cites·16 claims
- 3586US11289487B2Doped titanium nitride materials for DRAM capacitors, and related semiconductor devices, systems, and methodsMICRON TECHNOLOGY INC·Filed 2018·Granted Mar 29, 2022·3 cites·26 claims
- 3686US10644015B2Memory cell structure of a three-dimensional memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted May 5, 2020·3 cites·9 claims
- 3786US2025031366A1Staircase structure for memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2024·Application pending·0 cites
- 3884US11244951B2Memory cellsMICRON TECHNOLOGY INC·Filed 2020·Granted Feb 8, 2022·1 cites·22 claims
- 3984US2025280538A1Multiple-stack three-dimensional memory device and fabrication method thereofYANGTZE MEMORY TECH CO LTD·Filed 2025·Application pending·0 cites
- 4083US11145666B2Staircase structure for memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Oct 12, 2021·1 cites·20 claims
- 4182US10847528B2Memory cell structure of a three-dimensional memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Nov 24, 2020·1 cites·20 claims
- 4282US10804279B2Source structure of three-dimensional memory device and method for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted Oct 13, 2020·4 cites·16 claims
- 4381US12137558B2Staircase structure for memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Nov 5, 2024·0 cites·20 claims
- 4480USD595347SPrinterHEWLETT PACKARD DEVELOPMENT CO·Filed 2008·Granted Jun 30, 2009·26 cites·1 claims
- 4578US11706929B2Memory cellsMICRON TECHNOLOGY INC·Filed 2021·Granted Jul 18, 2023·0 cites·17 claims
- 4678US10062703B2Methods of forming a ferroelectric memory cellMICRON TECHNOLOGY INC·Filed 2017·Granted Aug 28, 2018·1 cites·23 claims
- 4778US8921821B2Memory cellsMICRON TECHNOLOGY INC·Filed 2013·Granted Dec 30, 2014·2 cites·6 claims
- 4877US12167610B2Semiconductor devices including ferroelectric materialsMICRON TECHNOLOGY INC·Filed 2021·Granted Dec 10, 2024·0 cites·19 claims
- 4976US12010838B2Staircase structure for memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Jun 11, 2024·0 cites·20 claims
- 5076US11672191B2Semiconductor devices comprising threshold switching materialsMICRON TECHNOLOGY INC·Filed 2021·Granted Jun 6, 2023·0 cites·20 claims
Showing the top 50 of 105 patent records by PatentIndex Score.
Join the waitlist — get patent alerts
Get an alert when Qian Tao files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →