Inventor · disambiguated record
Qiuyi Ye
Also filed as: YE QIUYI
13 granted patents·1,074 citations·filing 1991–2007
93Inventor score
Top patents by PatentIndex Score
13 records- 0198US5406509AElectrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefromENERGY CONVERSION DEVICES INC·Filed 1993·Granted Apr 11, 1995·423 cites·20 claims
- 0298US5335219AHomogeneous composition of microcrystalline semiconductor material, semiconductor devices and directly overwritable memory elements fabricated therefrom, and arrays fabricated from the memory elementsOVSHINSKY STANFORD R·Filed 1991·Granted Aug 2, 1994·450 cites·29 claims
- 0397US7376001B2Row circuit ring oscillator method for evaluating memory cell performanceIBM·Filed 2005·Granted May 20, 2008·81 cites·12 claims
- 0497US7301835B2Internally asymmetric methods and circuits for evaluating static memory cell dynamic stabilityIBM·Filed 2005·Granted Nov 27, 2007·67 cites·2 claims
- 0589US7483322B2Ring oscillator row circuit for evaluating memory cell performanceIBM·Filed 2007·Granted Jan 27, 2009·17 cites·10 claims
- 0685US7304895B2Bitline variable methods and circuits for evaluating static memory cell dynamic stabilityIBM·Filed 2005·Granted Dec 4, 2007·16 cites·19 claims
- 0771US7561483B2Internally asymmetric method for evaluating static memory cell dynamic stabilityIBM·Filed 2007·Granted Jul 14, 2009·5 cites·8 claims
- 0869US7015552B2Dual work function semiconductor structure with borderless contact and method of fabricating the sameIBM·Filed 2005·Granted Mar 21, 2006·3 cites·7 claims
- 0956US7558136B2Internally asymmetric methods and circuits for evaluating static memory cell dynamic stabilityIBM·Filed 2007·Granted Jul 7, 2009·2 cites·8 claims
- 1056US7515491B2Method for evaluating leakage effects on static memory cell access timeIBM·Filed 2007·Granted Apr 7, 2009·2 cites·7 claims
- 1153US6908815B2Dual work function semiconductor structure with borderless contact and method of fabricating the sameIBM·Filed 2003·Granted Jun 21, 2005·4 cites·7 claims
- 1250US6528855B2MOSFET having a low aspect ratio between the gate and the source/drainINFINEON TECHNOLOGIES AG·Filed 2001·Granted Mar 4, 2003·4 cites·2 claims
- 1339US6642584B2Dual work function semiconductor structure with borderless contact and method of fabricating the sameIBM·Filed 2001·Granted Nov 4, 2003·0 cites·11 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →