Inventor · disambiguated record
Quesnell Hartmann
Also filed as: HARTMANN QUESNELL · HARTMANN QUESNELL J
3 granted patents·2 pending applications·40 citations·filing 1995–2001
71Inventor score
Top patents by PatentIndex Score
5 records- 0158US6525349B2Heterojunction bipolar transistor with tensile graded carbon-doped base layer grown by MOCVDEPIWORKS INC·Filed 2001·Granted Feb 25, 2003·12 cites·20 claims
- 0257US6019840AProcess for forming deep level impurity undoped phosphorous containing semi-insulating epitaxial layersUNIV ILLINOIS·Filed 1997·Granted Feb 1, 2000·15 cites·22 claims
- 0345US5656538AHalide dopant process for producing semi-insulating group III-V regions for semiconductor devicesUNIV ILLINOIS·Filed 1995·Granted Aug 12, 1997·13 cites·18 claims
- 0426US2002190271A1InP heterojunction bipolar transistor with intentionally compressively mismatched base layerFiled 2001·Application pending·0 cites
- 0526US2003042503A1Transistor with intentionally tensile mismatched base layerFiled 2001·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →